Development of 6-inch High di/dt Thyristor for Pulse Switch
For the high requirements of the thyristor for pulse switch on di/dt tolerance, the turn-on process and di/dt failure mechanism of thyristor are described. The 6-inch thyristor for pulse switch has been developed by choosing appropriate parameters of silicon wafer, adjusting P-base impurity profile,...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2014-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2014.02.013 |
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| Summary: | For the high requirements of the thyristor for pulse switch on di/dt tolerance, the turn-on process and di/dt failure mechanism of thyristor are described. The 6-inch thyristor for pulse switch has been developed by choosing appropriate parameters of silicon wafer, adjusting P-base impurity profile, optimizing gate graph, and using double negative angle bevel. The experiment verifies that the pulse peak current can reach 300 kA, the di/dt rating is more than 3 000 A / s, and the thyristor has good stability and reliability. |
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| ISSN: | 2096-5427 |