Exploiting galvanic effect in Ag–Al alloy ion reservoir of resistive switching device for high-density cross-point array memory system
A silver (Ag)-based two-terminal semiconductor device exhibits resistive switching behavior driven by Ag+ ion migration. The migration of Ag+ ions, generated through the oxidation of the Ag electrode, forms a Ag filament, resulting in a low-resistance state. Conversely, the outward diffusion of Ag+...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0270506 |
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