Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction
Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Here...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-05-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202414353 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Herein, n‐type hBN is obtained by means of doping sulfur into hBN. The structure and the electric properties of S‐doped hBN is studied via density functional theory, indicating that the orbital coupling between S 3p and B 2p orbital introduces shallow donor energy levels. The S atoms in the multilayer structure demonstrate enhanced electron delocalization compared with its mono‐layer counterpart, suggesting that multilayer hBN:S is more inclined to be n‐type conductive than its mono‐layer counterpart. Experimentally, a multilayer hBN:S sample is successfully grown on sapphire substrates, where the S content, up to 1.21%, is obtained. The hBN:S film shows an in‐plane current of 1.6 nA using Ti as ohmic contact and 8.4 nA using Ni as Schottky contact, respectively. The donor level induced by the S atoms is located at 0.349 eV below the CBM. Finally, a vertically‐stacked n‐hBN/p‐hBN (hBN:S/hBN: Mg) structured junction is grown, and demonstrating a promise for being fabricated into a deep‐UV emitter. |
|---|---|
| ISSN: | 2198-3844 |