A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement
In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET. First, one decade of increment in the ON current is achieved and subthreshold swing is i...
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Semnan University
2024-04-01
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| Series: | مجله مدل سازی در مهندسی |
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| Online Access: | https://modelling.semnan.ac.ir/article_8360_a374f76599339e39f86d948a44b54647.pdf |
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| author | Amin Vanak Amir Amini |
| author_facet | Amin Vanak Amir Amini |
| author_sort | Amin Vanak |
| collection | DOAJ |
| description | In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET. First, one decade of increment in the ON current is achieved and subthreshold swing is improved by 10%. In this device, InAs is used in the source region of SON HS-JLTFET which has a lower energy band gap than Si to achieve thinner tunneling barrier width. Hence, more electron can tunnel from source to channel. As a result, it provides improvements in drain current and subthreshold swing. The second advantage is that the ambipolar current reduction due to the use of SON technique. In fact, in this technique, air is considered as the gate dielectric which results in decrement in the electric field in the drain/channel junction. This reduced electric field causes increasing the width of the tunneling barrier which results in lower ambipolar current in the drain/channel junction.. |
| format | Article |
| id | doaj-art-e9f74ca5f50648ffa19f0f1b8db24bbe |
| institution | Kabale University |
| issn | 2008-4854 2783-2538 |
| language | fas |
| publishDate | 2024-04-01 |
| publisher | Semnan University |
| record_format | Article |
| series | مجله مدل سازی در مهندسی |
| spelling | doaj-art-e9f74ca5f50648ffa19f0f1b8db24bbe2025-01-15T08:14:58ZfasSemnan Universityمجله مدل سازی در مهندسی2008-48542783-25382024-04-012276455310.22075/jme.2023.29572.23928360A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter ImprovementAmin Vanak0Amir Amini1Doctoral student, Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran.Associate Professor, Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran.In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET. First, one decade of increment in the ON current is achieved and subthreshold swing is improved by 10%. In this device, InAs is used in the source region of SON HS-JLTFET which has a lower energy band gap than Si to achieve thinner tunneling barrier width. Hence, more electron can tunnel from source to channel. As a result, it provides improvements in drain current and subthreshold swing. The second advantage is that the ambipolar current reduction due to the use of SON technique. In fact, in this technique, air is considered as the gate dielectric which results in decrement in the electric field in the drain/channel junction. This reduced electric field causes increasing the width of the tunneling barrier which results in lower ambipolar current in the drain/channel junction..https://modelling.semnan.ac.ir/article_8360_a374f76599339e39f86d948a44b54647.pdftunnel field effecttransistorsubthreshold swingambipolar currentheterostructure |
| spellingShingle | Amin Vanak Amir Amini A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement مجله مدل سازی در مهندسی tunnel field effect transistor subthreshold swing ambipolar current heterostructure |
| title | A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement |
| title_full | A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement |
| title_fullStr | A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement |
| title_full_unstemmed | A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement |
| title_short | A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement |
| title_sort | new heterostructure junctionless tunnel field effect transistor with silicon on nothing technique for dc parameter improvement |
| topic | tunnel field effect transistor subthreshold swing ambipolar current heterostructure |
| url | https://modelling.semnan.ac.ir/article_8360_a374f76599339e39f86d948a44b54647.pdf |
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