Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor
We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hex...
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Elsevier
2025-01-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847824000479 |
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| author | Qian Zhao Kaitong Sun Si Wu Hai-Feng Li |
| author_facet | Qian Zhao Kaitong Sun Si Wu Hai-Feng Li |
| author_sort | Qian Zhao |
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| description | We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hexagonal structure with the P63/mmc space group. As the temperature decreases, it undergoes a magnetic phase transition from high-temperature paramagnetism to low-temperature ferromagnetism. We determined the ferromagnetic transition temperature to be TC = 16.45(1) K by fitting the measured magnetic susceptibility using a Curie-Weiss law. Heat capacity analysis of EuAgP considered contributions from electrons, phonons, and magnons, revealing η = 0.03 J/(mol·K2), indicative of semiconducting behavior. Additionally, we calculated a band gap of ∼1.324(4) eV based on absorption spectrum measurements. The resistivity versus temperature of EuAgP measured in the absence of an applied magnetic field shows a pronounced peak around TC, which diminishes rapidly with increasing applied magnetic fields, ranging from 1 T to 14 T. An intriguing phenomenon emerges in the form of a distinct magnetoresistance transition, shifting from positive (e.g., 1.95% at 300 K and 14 T) to negative (e.g., −30.73% at 14.25 K and 14 T) as the temperature decreases. This behavior could be attributed to spin-disordered scattering. |
| format | Article |
| id | doaj-art-e8e9feac97c142d3a38d6beb423bef90 |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-e8e9feac97c142d3a38d6beb423bef902025-01-04T04:56:35ZengElsevierJournal of Materiomics2352-84782025-01-01111100853Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductorQian Zhao0Kaitong Sun1Si Wu2Hai-Feng Li3Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, ChinaInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, ChinaSchool of Physical Science and Technology, Ningbo University, Ningbo, 315211, Zhejiang, ChinaInstitute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, China; Corresponding author.We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hexagonal structure with the P63/mmc space group. As the temperature decreases, it undergoes a magnetic phase transition from high-temperature paramagnetism to low-temperature ferromagnetism. We determined the ferromagnetic transition temperature to be TC = 16.45(1) K by fitting the measured magnetic susceptibility using a Curie-Weiss law. Heat capacity analysis of EuAgP considered contributions from electrons, phonons, and magnons, revealing η = 0.03 J/(mol·K2), indicative of semiconducting behavior. Additionally, we calculated a band gap of ∼1.324(4) eV based on absorption spectrum measurements. The resistivity versus temperature of EuAgP measured in the absence of an applied magnetic field shows a pronounced peak around TC, which diminishes rapidly with increasing applied magnetic fields, ranging from 1 T to 14 T. An intriguing phenomenon emerges in the form of a distinct magnetoresistance transition, shifting from positive (e.g., 1.95% at 300 K and 14 T) to negative (e.g., −30.73% at 14.25 K and 14 T) as the temperature decreases. This behavior could be attributed to spin-disordered scattering.http://www.sciencedirect.com/science/article/pii/S2352847824000479Ferromagnetic semiconductorEuAgPMagnetoresistanceMagnetizationHeat capacity |
| spellingShingle | Qian Zhao Kaitong Sun Si Wu Hai-Feng Li Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor Journal of Materiomics Ferromagnetic semiconductor EuAgP Magnetoresistance Magnetization Heat capacity |
| title | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor |
| title_full | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor |
| title_fullStr | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor |
| title_full_unstemmed | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor |
| title_short | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor |
| title_sort | crystal ferromagnetism and magnetoresistance with sign reversal in a euagp semiconductor |
| topic | Ferromagnetic semiconductor EuAgP Magnetoresistance Magnetization Heat capacity |
| url | http://www.sciencedirect.com/science/article/pii/S2352847824000479 |
| work_keys_str_mv | AT qianzhao crystalferromagnetismandmagnetoresistancewithsignreversalinaeuagpsemiconductor AT kaitongsun crystalferromagnetismandmagnetoresistancewithsignreversalinaeuagpsemiconductor AT siwu crystalferromagnetismandmagnetoresistancewithsignreversalinaeuagpsemiconductor AT haifengli crystalferromagnetismandmagnetoresistancewithsignreversalinaeuagpsemiconductor |