Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors
In order to simplify the complexity of circuit design and reduce the cost, normally-off high electron mobility transistors are more preferable in the industry. The device with p-GaN gate has drawn increasing attention in the industry. In order to improve the threshold voltage and output saturation c...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Editorial Department of Journal of Nantong University (Natural Science Edition)
2021-06-01
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| Series: | Nantong Daxue xuebao. Ziran kexue ban |
| Subjects: | |
| Online Access: | https://ngzke.cbpt.cnki.net/portal/journal/portal/client/paper/f0197424140f799747297bbe6f0af782 |
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