Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures

Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures

Abstract The advancement in high-performance computing technologies, including quantum and aerospace systems, necessitates components that operate efficiently at cryogenic temperatures. In this study, we demonstrate a hafnia-based ferroelectric tunnel junction (FTJ) that achieves a record-high tunne...

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Bibliographic Details
Main Authors: Junghyeon Hwang, Chaeheon Kim, Jinho Ahn, Sanghun Jeon
Format: Article
Language:English
Published: SpringerOpen 2024-12-01
Series:Nano Convergence
Subjects:
Ferroelectric tunnel junction
Self-rectifying
Hafnia-based ferroelectrics
Imprint effect
Cryogenic
Online Access:https://doi.org/10.1186/s40580-024-00461-2
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