Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions
Abstract The Si‐based self‐powered broadband photodiode (SSBP) is prized for its ability to swiftly detect light across a wide spectrum without requiring an external voltage. However, boosting its efficiency remains challenging due to its high refractive index and limited UV light penetration. A com...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-11-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400649 |
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| author | Wangmyung Choi Seungme Kang Yeong Jae Kim Youngwoo Yoo Wonjun Shin Yeongkwon Kim Young‐Joon Kim Byung Chul Jang Jaehyun Hur Hocheon Yoo |
| author_facet | Wangmyung Choi Seungme Kang Yeong Jae Kim Youngwoo Yoo Wonjun Shin Yeongkwon Kim Young‐Joon Kim Byung Chul Jang Jaehyun Hur Hocheon Yoo |
| author_sort | Wangmyung Choi |
| collection | DOAJ |
| description | Abstract The Si‐based self‐powered broadband photodiode (SSBP) is prized for its ability to swiftly detect light across a wide spectrum without requiring an external voltage. However, boosting its efficiency remains challenging due to its high refractive index and limited UV light penetration. A combination of Si with ZnGa2O4, an ultra‐wide‐bandgap spinel material, can bring new opportunities to address these shortcomings of SSBP. In this study, a ZnGa2O4/p‐Si heterojunction photodiode is presented, which is capable of detecting UV to near‐infrared light autonomously. Operating without bias, this device exhibits excellent rectification and detects wavelengths from 265 to 1000 nm, achieving impressive performance metrics such as a photo‐to‐dark current ratio of 5.8 × 104, response speed of less than 3 ms, responsivity of 117 mA W−1, and specific detectivity of 5.5 × 1012 Jones while the photodiode demonstrates exceptional stability and durability under harsh conditions. The versatility of this device is demonstrated by applying it to the optical imaging sensors and physically unclonable security devices. This study provides new inspirations for the development of the energy‐efficient and emerging optical sensing technologies. |
| format | Article |
| id | doaj-art-e02a27f05f9b4a05a6b36e592c43a865 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-e02a27f05f9b4a05a6b36e592c43a8652024-11-09T18:01:02ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-11-011011n/an/a10.1002/aelm.202400649Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable FunctionsWangmyung Choi0Seungme Kang1Yeong Jae Kim2Youngwoo Yoo3Wonjun Shin4Yeongkwon Kim5Young‐Joon Kim6Byung Chul Jang7Jaehyun Hur8Hocheon Yoo9Department of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of KoreaDepartment of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of KoreaCeramic Total Solution Center Korea Institute of Ceramic Engineering and Technology 3321 Gyeongchung‐daero Icheon 17303 Republic of KoreaDepartment of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of KoreaDepartment of Semiconductor Convergence Engineering Sungkyunkwan University 2066, Seobu‐ro, Jangan‐gu Suwon 16 419 Republic of KoreaSchool of Electronics and Electrical Engineering Kyungpook National University 80 Daehakro, Bukgu Daegu 41566 Republic of KoreaDepartment of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of KoreaSchool of Electronics and Electrical Engineering Kyungpook National University 80 Daehakro, Bukgu Daegu 41566 Republic of KoreaDepartment of Chemical and Biological Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of KoreaDepartment of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 Republic of KoreaAbstract The Si‐based self‐powered broadband photodiode (SSBP) is prized for its ability to swiftly detect light across a wide spectrum without requiring an external voltage. However, boosting its efficiency remains challenging due to its high refractive index and limited UV light penetration. A combination of Si with ZnGa2O4, an ultra‐wide‐bandgap spinel material, can bring new opportunities to address these shortcomings of SSBP. In this study, a ZnGa2O4/p‐Si heterojunction photodiode is presented, which is capable of detecting UV to near‐infrared light autonomously. Operating without bias, this device exhibits excellent rectification and detects wavelengths from 265 to 1000 nm, achieving impressive performance metrics such as a photo‐to‐dark current ratio of 5.8 × 104, response speed of less than 3 ms, responsivity of 117 mA W−1, and specific detectivity of 5.5 × 1012 Jones while the photodiode demonstrates exceptional stability and durability under harsh conditions. The versatility of this device is demonstrated by applying it to the optical imaging sensors and physically unclonable security devices. This study provides new inspirations for the development of the energy‐efficient and emerging optical sensing technologies.https://doi.org/10.1002/aelm.202400649broadband photodiodesecurity devicesself‐powered operationType‐I heterojunctionZnGa2O4 film |
| spellingShingle | Wangmyung Choi Seungme Kang Yeong Jae Kim Youngwoo Yoo Wonjun Shin Yeongkwon Kim Young‐Joon Kim Byung Chul Jang Jaehyun Hur Hocheon Yoo Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions Advanced Electronic Materials broadband photodiode security devices self‐powered operation Type‐I heterojunction ZnGa2O4 film |
| title | Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions |
| title_full | Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions |
| title_fullStr | Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions |
| title_full_unstemmed | Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions |
| title_short | Robust Light Detection from Ultraviolet to Near‐Infrared with ZnGa2O4/p‐Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions |
| title_sort | robust light detection from ultraviolet to near infrared with znga2o4 p si heterojunction photodiode and its application for optoelectronic physically unclonable functions |
| topic | broadband photodiode security devices self‐powered operation Type‐I heterojunction ZnGa2O4 film |
| url | https://doi.org/10.1002/aelm.202400649 |
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