Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
Modern multi-color RGB micro-light emitting diode (μLED) displays and digital micro-mirror laser projectors often require the use of both III-V and III-Nitride material systems for different pixel/laser colors. This is due primarily to the conventionally low efficiencies of red...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9330534/ |
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