2D Ruddlesden–Popper X-FPEA2PbI4 perovskites for highly stable PeLED with improved opto-electro-mechanical properties
Abstract We investigate the opto-electro-mechanical characteristics and stability of Ruddlesden–Popper X-FPEA2PbI4 perovskites, where X represents para (p), meso (m), and ortho (o) configurations. The findings reveal that the transition from para to meso and ortho configurations results in a progres...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-00342-6 |
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| Summary: | Abstract We investigate the opto-electro-mechanical characteristics and stability of Ruddlesden–Popper X-FPEA2PbI4 perovskites, where X represents para (p), meso (m), and ortho (o) configurations. The findings reveal that the transition from para to meso and ortho configurations results in a progressive increase in the bandgap, with values of 2.097 eV, 2.133 eV, and 2.177 eV, respectively. Notably, p-FPEA2PbI4 exhibits superior stability, characterized by an enhanced formation energy of − 4.825 eV, compared to m-FPEA2PbI4 (− 4.647 eV) and o-FPEA2PbI4 (− 4.581 eV). Thus, p-FPEA2PbI4 emerges as a leading candidate for the active layer in perovskite light-emitting diodes (PeLEDs). Internal quantum efficiencies of 6.289% for PEA2PbI4 and 2.285% for p-FPEA2PbI4 have been achieved, both of which are higher than those of MAPbI3. In contrast, the dependence of efficiency on temperature fluctuations for p-FPEA2PbI4 is 0.01 1/K, compared to PEA2PbI4’s 0.0282 1/K, highlighting its enhanced stability under temperature changes. Furthermore, the stability of the emission spectrum against temperature fluctuations for p-FPEA2PbI4, with a value of 0.0156 nm/K, is greater than that of PEA2PbI4, which has a value of 0.0245 nm/K. Although the efficiency of PeLEDs utilizing p-FPEA2PbI4 is somewhat lower than that of PEA2PbI4, its superior stability makes it a compelling choice for future applications, paving the way for more reliable and durable light-emitting devices. |
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| ISSN: | 2045-2322 |