Temperature resistance coefficient of doped with rare earth elements nanostructured silicon films
The regularities of changes in the concentration of an electrically active dopant in a nanostructured silicon film by changing the electrical resistivity depending on the doping conditions were investigated. The dependences of the changes in the obtained structures doped with rare-earth elements, su...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-11-01
|
| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3213 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|