Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications
Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel surface, critically impacting on the chann...
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2025-01-01
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| author | Song-Hyeon Kuk Kyul Ko Bong Ho Kim Joon Pyo Kim Jae-Hoon Han Sang-Hyeon Kim |
| author_facet | Song-Hyeon Kuk Kyul Ko Bong Ho Kim Joon Pyo Kim Jae-Hoon Han Sang-Hyeon Kim |
| author_sort | Song-Hyeon Kuk |
| collection | DOAJ |
| description | Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel surface, critically impacting on the channel carrier behaviors in metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric field-effect-transistor (FEFET). In this context, channel mobility degradation by ferroelectric polarization and trapped charges will become a concern, because it is well-known that a huge number of charges (~1014 cm-2) are trapped at the gate stack. Especially, channel mobility during the read operation is required to be discussed, because FEFETs are typically targeted for non-volatile memory applications. In this work, we show that channel mobility (μch) and surface inversion carrier density (Ns,inv) in the n-channel FEFET (nFEFET) during read can be significantly different in the multi-level-cell (MLC) operation. This indicates that trapped carriers significantly degrade mobility and the degradation has a “history” effect, revealing that μch and Ns,inv are determined by overlapped effects of ferroelectric polarization and trapped charges. In addition, it is suggested that ferroelectric polarization induces remote phonon scattering. The complicated device physics of the MFIS FEFET indicates that channel mobility should be carefully modeled in the device simulation. |
| format | Article |
| id | doaj-art-ddab24e99f424f1c825095cb752e8f6c |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ddab24e99f424f1c825095cb752e8f6c2025-01-10T00:00:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011381410.1109/JEDS.2024.350737910769066Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory ApplicationsSong-Hyeon Kuk0https://orcid.org/0000-0002-3211-4913Kyul Ko1Bong Ho Kim2https://orcid.org/0000-0002-5528-6718Joon Pyo Kim3Jae-Hoon Han4https://orcid.org/0000-0003-3575-9140Sang-Hyeon Kim5https://orcid.org/0000-0002-2517-4408School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaCenter for Quantum Technology, Korea Institute of Science and Technology, Seoul, Republic of KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaCenter for Quantum Technology, Korea Institute of Science and Technology, Seoul, Republic of KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaFerroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel surface, critically impacting on the channel carrier behaviors in metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric field-effect-transistor (FEFET). In this context, channel mobility degradation by ferroelectric polarization and trapped charges will become a concern, because it is well-known that a huge number of charges (~1014 cm-2) are trapped at the gate stack. Especially, channel mobility during the read operation is required to be discussed, because FEFETs are typically targeted for non-volatile memory applications. In this work, we show that channel mobility (μch) and surface inversion carrier density (Ns,inv) in the n-channel FEFET (nFEFET) during read can be significantly different in the multi-level-cell (MLC) operation. This indicates that trapped carriers significantly degrade mobility and the degradation has a “history” effect, revealing that μch and Ns,inv are determined by overlapped effects of ferroelectric polarization and trapped charges. In addition, it is suggested that ferroelectric polarization induces remote phonon scattering. The complicated device physics of the MFIS FEFET indicates that channel mobility should be carefully modeled in the device simulation.https://ieeexplore.ieee.org/document/10769066/Ferroelectric transistormemory devicemobilitydevice physicscharge trappingreliability |
| spellingShingle | Song-Hyeon Kuk Kyul Ko Bong Ho Kim Joon Pyo Kim Jae-Hoon Han Sang-Hyeon Kim Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications IEEE Journal of the Electron Devices Society Ferroelectric transistor memory device mobility device physics charge trapping reliability |
| title | Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications |
| title_full | Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications |
| title_fullStr | Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications |
| title_full_unstemmed | Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications |
| title_short | Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications |
| title_sort | channel mobility and inversion carrier density in mfis fefet deep insights into device physics for non volatile memory applications |
| topic | Ferroelectric transistor memory device mobility device physics charge trapping reliability |
| url | https://ieeexplore.ieee.org/document/10769066/ |
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