Kuk, S., Ko, K., Kim, B. H., Kim, J. P., Han, J., & Kim, S. Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications. IEEE.
Chicago Style (17th ed.) CitationKuk, Song-Hyeon, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, and Sang-Hyeon Kim. Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications. IEEE.
MLA (9th ed.) CitationKuk, Song-Hyeon, et al. Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications. IEEE.
Warning: These citations may not always be 100% accurate.