Optical properties of nitride-rich SiNx and its use in CMOS-compatible near-UV Bragg filter fabrication
Nitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption l...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Optical Materials: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147824000603 |
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| Summary: | Nitride-rich silicon-nitride (SiNx) is being explored for its potential as a suitable optical material for use in microsystems operating in the near-UV spectral range. Although silicon-rich SiNx is widely accepted as a CMOS-compatible dielectric and micromechanical material, its optical absorption limits application to the visible to near-IR spectral range. However, this work shows that a balance can be achieved between a sufficiently high index of refraction (n> 2) and an acceptable optical loss (k<10−3) in nitride-rich SiNx of appropriate composition (x∼1.45). Bragg reflectors with a design wavelength at λo= 330 nm are used for validation. PECVD is used for sample preparation and experiments confirm that the spectral range available for use of SiNx-based optical microsystems extends to wavelengths as low as 300 nm. |
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| ISSN: | 2590-1478 |