Multi-channel AlN/GaN Schottky barrier diodes
This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R _sh (69 Ω/□), thanks to a high ${N}_{{s}}$ of 6.7 × 10 ^13 cm ^−2 . The SBD...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada2d8 |
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| _version_ | 1841554290817105920 |
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| author | Hanchao Li Yue Wang Qingyun Xie Hanlin Xie Hui Teng Tan Pradip Dalapati Siyu Liu Kumud Ranjan Siewchuen Foo Subramaniam Arulkumaran Chee Lip Gan Geok Ing Ng |
| author_facet | Hanchao Li Yue Wang Qingyun Xie Hanlin Xie Hui Teng Tan Pradip Dalapati Siyu Liu Kumud Ranjan Siewchuen Foo Subramaniam Arulkumaran Chee Lip Gan Geok Ing Ng |
| author_sort | Hanchao Li |
| collection | DOAJ |
| description | This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R _sh (69 Ω/□), thanks to a high ${N}_{{s}}$ of 6.7 × 10 ^13 cm ^−2 . The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm ^−1 . Temperature-dependent I–V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications. |
| format | Article |
| id | doaj-art-dd19489112cc40f994e5176711cdbda7 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-dd19489112cc40f994e5176711cdbda72025-01-08T15:25:42ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650210.35848/1882-0786/ada2d8Multi-channel AlN/GaN Schottky barrier diodesHanchao Li0https://orcid.org/0009-0009-2921-3353Yue Wang1Qingyun Xie2Hanlin Xie3Hui Teng Tan4Pradip Dalapati5Siyu Liu6Kumud Ranjan7Siewchuen Foo8Subramaniam Arulkumaran9Chee Lip Gan10Geok Ing Ng11School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, SingaporeLow Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, SingaporeNational GaN Technology Centre (NGTC), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, Singapore; Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, SingaporeNational GaN Technology Centre (NGTC), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, Singapore; Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, SingaporeLow Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore; Energy Research Institute, Nanyang Technological University , 1 CleanTech Loop, #06-04, Singapore 637141, SingaporeNational GaN Technology Centre (NGTC), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, Singapore; Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, SingaporeTemasek Laboratories@NTU, Nanyang Technological University , 50 Nanyang Drive, Singapore 637553, SingaporeTemasek Laboratories@NTU, Nanyang Technological University , 50 Nanyang Drive, Singapore 637553, SingaporeSchool of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore; Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, Singapore; National GaN Technology Centre (NGTC), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, Singapore; Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), Innovis #08-02, Singapore 138634, Singapore; Energy Research Institute, Nanyang Technological University , 1 CleanTech Loop, #06-04, Singapore 637141, Singapore; Temasek Laboratories@NTU, Nanyang Technological University , 50 Nanyang Drive, Singapore 637553, SingaporeThis paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R _sh (69 Ω/□), thanks to a high ${N}_{{s}}$ of 6.7 × 10 ^13 cm ^−2 . The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm ^−1 . Temperature-dependent I–V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.https://doi.org/10.35848/1882-0786/ada2d8GaN Schottky Barrier Diodesmulti-channelAlN/GaN2DEG |
| spellingShingle | Hanchao Li Yue Wang Qingyun Xie Hanlin Xie Hui Teng Tan Pradip Dalapati Siyu Liu Kumud Ranjan Siewchuen Foo Subramaniam Arulkumaran Chee Lip Gan Geok Ing Ng Multi-channel AlN/GaN Schottky barrier diodes Applied Physics Express GaN Schottky Barrier Diodes multi-channel AlN/GaN 2DEG |
| title | Multi-channel AlN/GaN Schottky barrier diodes |
| title_full | Multi-channel AlN/GaN Schottky barrier diodes |
| title_fullStr | Multi-channel AlN/GaN Schottky barrier diodes |
| title_full_unstemmed | Multi-channel AlN/GaN Schottky barrier diodes |
| title_short | Multi-channel AlN/GaN Schottky barrier diodes |
| title_sort | multi channel aln gan schottky barrier diodes |
| topic | GaN Schottky Barrier Diodes multi-channel AlN/GaN 2DEG |
| url | https://doi.org/10.35848/1882-0786/ada2d8 |
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