Resistivity scaling of porous MoP narrow lines
The resistivity scaling of copper (Cu) interconnects with decreasing dimensions remains a major challenge in the downscaling of integrated circuits. Molybdenum phosphide (MoP) is a triple-point topological semimetal (TSM) with low resistivity and high carrier density. With the presence of topologica...
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| Main Authors: | Han Wang, Gangtae Jin, Quynh P. Sam, Stephen D. Funni, Roberto R. Panepucci, Astrid D. Kengne, Saif Siddique, Nghiep Khoan Duong, Yeryun Cheon, Mehrdad T. Kiani, Judy J. Cha |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0244183 |
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