Resistivity scaling of porous MoP narrow lines

The resistivity scaling of copper (Cu) interconnects with decreasing dimensions remains a major challenge in the downscaling of integrated circuits. Molybdenum phosphide (MoP) is a triple-point topological semimetal (TSM) with low resistivity and high carrier density. With the presence of topologica...

Full description

Saved in:
Bibliographic Details
Main Authors: Han Wang, Gangtae Jin, Quynh P. Sam, Stephen D. Funni, Roberto R. Panepucci, Astrid D. Kengne, Saif Siddique, Nghiep Khoan Duong, Yeryun Cheon, Mehrdad T. Kiani, Judy J. Cha
Format: Article
Language:English
Published: AIP Publishing LLC 2024-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0244183
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items