A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment

A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment

In this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system. The leakage current and breakdown voltage of the diode are systematically studied. Due to the b...

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Bibliographic Details
Main Authors: Fuchun Jia, Qingyuan Chang, Mengdi Li, Yungang Liu, Ziyan Lu, Jifan Zhang, Jinming Lai, Hao Lu, Yang Lu, Bin Hou, Ling Yang, Xiaohua Ma
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Micromachines
Subjects:
gallium nitride
PiN diode
reverse characteristic
beveled sidewall
Online Access:https://www.mdpi.com/2072-666X/15/12/1448
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