A low switching loss GaN trench MOSFET design utilizing a triple-shield structure

A low switching loss GaN trench MOSFET design utilizing a triple-shield structure

Abstract An innovative GaN trench MOSFET featuring an ultra-low gate-drain charge (Q gd ) is proposed, with its operational mechanisms thoroughly investigated using TCAD simulations. This novel MOSFET design introduces a triple-shield structure (BPSG-MOS) comprising three critical components: (1) a...

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Bibliographic Details
Main Authors: Yihang Qiu, Li Wei
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Subjects:
GaN trench MOSFET
SG
PSR
Semi-wrapped
Cgd
Qgd
Online Access:https://doi.org/10.1038/s41598-024-84007-w
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