A low switching loss GaN trench MOSFET design utilizing a triple-shield structure
Abstract An innovative GaN trench MOSFET featuring an ultra-low gate-drain charge (Q gd ) is proposed, with its operational mechanisms thoroughly investigated using TCAD simulations. This novel MOSFET design introduces a triple-shield structure (BPSG-MOS) comprising three critical components: (1) a...
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-024-84007-w |
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| author | Yihang Qiu Li Wei |
| author_facet | Yihang Qiu Li Wei |
| author_sort | Yihang Qiu |
| collection | DOAJ |
| description | Abstract An innovative GaN trench MOSFET featuring an ultra-low gate-drain charge (Q gd ) is proposed, with its operational mechanisms thoroughly investigated using TCAD simulations. This novel MOSFET design introduces a triple-shield structure (BPSG-MOS) comprising three critical components: (1) a grounded split gate (SG), (2) a P+ shield region (PSR), and (3) a semi-wrapped BP layer that extends the P-shield beneath the gate and along the sidewalls of the trench gate. Both the SG and PSR effectively reduce gate-drain coupling, transforming most of the gate-drain capacitance (C gd ) into a series combination of gate-source capacitance (C gs ) and drain-source capacitance (C ds ). Furthermore, the BP layer refines the gate-drain capacitance by converting the C gd at the trench gate sidewalls into C gs . This configuration significantly lowers C gd , resulting in an ultra-low Q gd . Compared to the dual-shield MOSFET (PSGT-MOS) and the conventional trench MOSFET (TG-MOS), the BPSG-MOS achieves reductions in C gd by 81% and 98%, respectively. |
| format | Article |
| id | doaj-art-da9aa0c1ec1744d28f75c47dc2833985 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
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| series | Scientific Reports |
| spelling | doaj-art-da9aa0c1ec1744d28f75c47dc28339852025-01-05T12:16:38ZengNature PortfolioScientific Reports2045-23222025-01-0115111110.1038/s41598-024-84007-wA low switching loss GaN trench MOSFET design utilizing a triple-shield structureYihang Qiu0Li Wei1College of Information and Control Engineering, Jilin Institute of Chemical TechnologyCollege of Physics and Electronic Information, Baicheng Normal UniversityAbstract An innovative GaN trench MOSFET featuring an ultra-low gate-drain charge (Q gd ) is proposed, with its operational mechanisms thoroughly investigated using TCAD simulations. This novel MOSFET design introduces a triple-shield structure (BPSG-MOS) comprising three critical components: (1) a grounded split gate (SG), (2) a P+ shield region (PSR), and (3) a semi-wrapped BP layer that extends the P-shield beneath the gate and along the sidewalls of the trench gate. Both the SG and PSR effectively reduce gate-drain coupling, transforming most of the gate-drain capacitance (C gd ) into a series combination of gate-source capacitance (C gs ) and drain-source capacitance (C ds ). Furthermore, the BP layer refines the gate-drain capacitance by converting the C gd at the trench gate sidewalls into C gs . This configuration significantly lowers C gd , resulting in an ultra-low Q gd . Compared to the dual-shield MOSFET (PSGT-MOS) and the conventional trench MOSFET (TG-MOS), the BPSG-MOS achieves reductions in C gd by 81% and 98%, respectively.https://doi.org/10.1038/s41598-024-84007-wGaN trench MOSFETSGPSRSemi-wrappedCgdQgd |
| spellingShingle | Yihang Qiu Li Wei A low switching loss GaN trench MOSFET design utilizing a triple-shield structure Scientific Reports GaN trench MOSFET SG PSR Semi-wrapped Cgd Qgd |
| title | A low switching loss GaN trench MOSFET design utilizing a triple-shield structure |
| title_full | A low switching loss GaN trench MOSFET design utilizing a triple-shield structure |
| title_fullStr | A low switching loss GaN trench MOSFET design utilizing a triple-shield structure |
| title_full_unstemmed | A low switching loss GaN trench MOSFET design utilizing a triple-shield structure |
| title_short | A low switching loss GaN trench MOSFET design utilizing a triple-shield structure |
| title_sort | low switching loss gan trench mosfet design utilizing a triple shield structure |
| topic | GaN trench MOSFET SG PSR Semi-wrapped Cgd Qgd |
| url | https://doi.org/10.1038/s41598-024-84007-w |
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