Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts
Abstract Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field e...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-11-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-024-00507-3 |
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| author | Shubhrasish Mukherjee Gaurab Samanta Md Nur Hasan Shubhadip Moulick Ruta Kulkarni Kenji Watanabe Takashi Taniguchi Arumugum Thamizhavel Debjani Karmakar Atindra Nath Pal |
| author_facet | Shubhrasish Mukherjee Gaurab Samanta Md Nur Hasan Shubhadip Moulick Ruta Kulkarni Kenji Watanabe Takashi Taniguchi Arumugum Thamizhavel Debjani Karmakar Atindra Nath Pal |
| author_sort | Shubhrasish Mukherjee |
| collection | DOAJ |
| description | Abstract Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices. |
| format | Article |
| id | doaj-art-d9855c9a069a41cfb23e45ce6fc11065 |
| institution | Kabale University |
| issn | 2397-7132 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-d9855c9a069a41cfb23e45ce6fc110652024-11-10T12:28:04ZengNature Portfolionpj 2D Materials and Applications2397-71322024-11-01811910.1038/s41699-024-00507-3Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contactsShubhrasish Mukherjee0Gaurab Samanta1Md Nur Hasan2Shubhadip Moulick3Ruta Kulkarni4Kenji Watanabe5Takashi Taniguchi6Arumugum Thamizhavel7Debjani Karmakar8Atindra Nath Pal9Technical Research Centre, S. N. Bose National Centre for Basic SciencesTechnical Research Centre, S. N. Bose National Centre for Basic SciencesDepartment of Physics and Astronomy, Uppsala UniversityDepartment of Condensed Matter and Material Physics, S. N. Bose National Centre for Basic SciencesDepartment of Condensed Matter Physics and Material Science, Tata Institute of Fundamental ResearchResearch Center for Electronic and Optical Materials, National Institute for Materials ScienceResearch Center for Materials Nano architectonics, National Institute for Materials ScienceDepartment of Condensed Matter Physics and Material Science, Tata Institute of Fundamental ResearchDepartment of Physics and Astronomy, Uppsala UniversityTechnical Research Centre, S. N. Bose National Centre for Basic SciencesAbstract Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.https://doi.org/10.1038/s41699-024-00507-3 |
| spellingShingle | Shubhrasish Mukherjee Gaurab Samanta Md Nur Hasan Shubhadip Moulick Ruta Kulkarni Kenji Watanabe Takashi Taniguchi Arumugum Thamizhavel Debjani Karmakar Atindra Nath Pal Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts npj 2D Materials and Applications |
| title | Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts |
| title_full | Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts |
| title_fullStr | Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts |
| title_full_unstemmed | Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts |
| title_short | Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts |
| title_sort | achieving nearly barrier free transport in high mobility res2 phototransistors with van der waals contacts |
| url | https://doi.org/10.1038/s41699-024-00507-3 |
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