Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures
In this paper, a novel approach of materials combination is proposed to enhance the performance of Schottky Barrier Diodes (SBD) detector. High purity of gold (90В %) in combination with two different semiconductors (Indium Phosphide (InP) and Gallium Arsenide (GaAs)) are used to perform SBD samples...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-07-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04006.pdf |
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