Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures

In this paper, a novel approach of materials combination is proposed to enhance the performance of Schottky Barrier Diodes (SBD) detector. High purity of gold (90В %) in combination with two different semiconductors (Indium Phosphide (InP) and Gallium Arsenide (GaAs)) are used to perform SBD samples...

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Bibliographic Details
Main Authors: K.В Reguieg, Z.В Souar, R.В Becharef
Format: Article
Language:English
Published: Sumy State University 2017-07-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04006.pdf
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