INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and I...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2013-10-01
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| Series: | Тонкие химические технологии |
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| Online Access: | https://www.finechem-mirea.ru/jour/article/view/535 |
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| author | A. L. Sizov I. D. Burlakov N. I. Yakovleva E. D. Korotaev A. E. Mirofyanchenko |
| author_facet | A. L. Sizov I. D. Burlakov N. I. Yakovleva E. D. Korotaev A. E. Mirofyanchenko |
| author_sort | A. L. Sizov |
| collection | DOAJ |
| description | Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy. |
| format | Article |
| id | doaj-art-d7b5ee1c7e6b4c6db7db4f5c56f54097 |
| institution | Kabale University |
| issn | 2410-6593 2686-7575 |
| language | Russian |
| publishDate | 2013-10-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Тонкие химические технологии |
| spelling | doaj-art-d7b5ee1c7e6b4c6db7db4f5c56f540972025-08-20T03:43:10ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752013-10-01859498529INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXYA. L. Sizov0I. D. Burlakov1N. I. Yakovleva2E. D. Korotaev3A. E. Mirofyanchenko4«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy.https://www.finechem-mirea.ru/jour/article/view/535mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties. |
| spellingShingle | A. L. Sizov I. D. Burlakov N. I. Yakovleva E. D. Korotaev A. E. Mirofyanchenko INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY Тонкие химические технологии mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties. |
| title | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY |
| title_full | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY |
| title_fullStr | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY |
| title_full_unstemmed | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY |
| title_short | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY |
| title_sort | investigation of ge substrates for mct grown by molecular beam epitaxy |
| topic | mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties. |
| url | https://www.finechem-mirea.ru/jour/article/view/535 |
| work_keys_str_mv | AT alsizov investigationofgesubstratesformctgrownbymolecularbeamepitaxy AT idburlakov investigationofgesubstratesformctgrownbymolecularbeamepitaxy AT niyakovleva investigationofgesubstratesformctgrownbymolecularbeamepitaxy AT edkorotaev investigationofgesubstratesformctgrownbymolecularbeamepitaxy AT aemirofyanchenko investigationofgesubstratesformctgrownbymolecularbeamepitaxy |