INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY

Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and I...

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Main Authors: A. L. Sizov, I. D. Burlakov, N. I. Yakovleva, E. D. Korotaev, A. E. Mirofyanchenko
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2013-10-01
Series:Тонкие химические технологии
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Online Access:https://www.finechem-mirea.ru/jour/article/view/535
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author A. L. Sizov
I. D. Burlakov
N. I. Yakovleva
E. D. Korotaev
A. E. Mirofyanchenko
author_facet A. L. Sizov
I. D. Burlakov
N. I. Yakovleva
E. D. Korotaev
A. E. Mirofyanchenko
author_sort A. L. Sizov
collection DOAJ
description Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy.
format Article
id doaj-art-d7b5ee1c7e6b4c6db7db4f5c56f54097
institution Kabale University
issn 2410-6593
2686-7575
language Russian
publishDate 2013-10-01
publisher MIREA - Russian Technological University
record_format Article
series Тонкие химические технологии
spelling doaj-art-d7b5ee1c7e6b4c6db7db4f5c56f540972025-08-20T03:43:10ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752013-10-01859498529INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXYA. L. Sizov0I. D. Burlakov1N. I. Yakovleva2E. D. Korotaev3A. E. Mirofyanchenko4«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123«RD&P Center «Orion», Moscow, 111123Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy.https://www.finechem-mirea.ru/jour/article/view/535mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties.
spellingShingle A. L. Sizov
I. D. Burlakov
N. I. Yakovleva
E. D. Korotaev
A. E. Mirofyanchenko
INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
Тонкие химические технологии
mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties.
title INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
title_full INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
title_fullStr INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
title_full_unstemmed INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
title_short INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY
title_sort investigation of ge substrates for mct grown by molecular beam epitaxy
topic mct, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties.
url https://www.finechem-mirea.ru/jour/article/view/535
work_keys_str_mv AT alsizov investigationofgesubstratesformctgrownbymolecularbeamepitaxy
AT idburlakov investigationofgesubstratesformctgrownbymolecularbeamepitaxy
AT niyakovleva investigationofgesubstratesformctgrownbymolecularbeamepitaxy
AT edkorotaev investigationofgesubstratesformctgrownbymolecularbeamepitaxy
AT aemirofyanchenko investigationofgesubstratesformctgrownbymolecularbeamepitaxy