Research on Switching Behavior of High Power IGBT5 Module
It investigated the switching characteristics of IGBT5 P5 chip for the requirement of higher power density output and high reliability in practical application. From test bench of component level, it was further analyzed how to influence the turn-on and turn-off process by external parameters like g...
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| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.02.006 |
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| _version_ | 1849224910451245056 |
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| author | ZHAO Zhenbo Wilhelm RUSCHE |
| author_facet | ZHAO Zhenbo Wilhelm RUSCHE |
| author_sort | ZHAO Zhenbo |
| collection | DOAJ |
| description | It investigated the switching characteristics of IGBT5 P5 chip for the requirement of higher power density output and high reliability in practical application. From test bench of component level, it was further analyzed how to influence the turn-on and turn-off process by external parameters like gate resistor, gate voltage and junction temperature, short pulse etc. The abnormal switching phenomena during test were explained from the view of semiconductor mechanism. It is obviously concluded to be the strong robustness and high stability of IGBT5 switching characteristic during normal and abnormal condition. |
| format | Article |
| id | doaj-art-d3cc711bbdda4d8d87a822813fcd44c9 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2017-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-d3cc711bbdda4d8d87a822813fcd44c92025-08-25T06:52:11ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272017-01-0134333782329748Research on Switching Behavior of High Power IGBT5 ModuleZHAO ZhenboWilhelm RUSCHEIt investigated the switching characteristics of IGBT5 P5 chip for the requirement of higher power density output and high reliability in practical application. From test bench of component level, it was further analyzed how to influence the turn-on and turn-off process by external parameters like gate resistor, gate voltage and junction temperature, short pulse etc. The abnormal switching phenomena during test were explained from the view of semiconductor mechanism. It is obviously concluded to be the strong robustness and high stability of IGBT5 switching characteristic during normal and abnormal condition.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.02.006IGBT5PrimePACKTM3+switch characteristicSOA(safe operation area)current density |
| spellingShingle | ZHAO Zhenbo Wilhelm RUSCHE Research on Switching Behavior of High Power IGBT5 Module Kongzhi Yu Xinxi Jishu IGBT5 PrimePACKTM3+ switch characteristic SOA(safe operation area) current density |
| title | Research on Switching Behavior of High Power IGBT5 Module |
| title_full | Research on Switching Behavior of High Power IGBT5 Module |
| title_fullStr | Research on Switching Behavior of High Power IGBT5 Module |
| title_full_unstemmed | Research on Switching Behavior of High Power IGBT5 Module |
| title_short | Research on Switching Behavior of High Power IGBT5 Module |
| title_sort | research on switching behavior of high power igbt5 module |
| topic | IGBT5 PrimePACKTM3+ switch characteristic SOA(safe operation area) current density |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.02.006 |
| work_keys_str_mv | AT zhaozhenbo researchonswitchingbehaviorofhighpowerigbt5module AT wilhelmrusche researchonswitchingbehaviorofhighpowerigbt5module |