High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
The growth of Ce:(Lu _1−x Y _x ) _2 SiO _5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce ^3+ valence state is obtained. The growth u...
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Language: | English |
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IOP Publishing
2024-01-01
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Series: | Applied Physics Express |
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Online Access: | https://doi.org/10.35848/1882-0786/ad9b6c |
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author | Encarnación G. Víllora Makoto Saito Kiyoshi Shimamura |
author_facet | Encarnación G. Víllora Makoto Saito Kiyoshi Shimamura |
author_sort | Encarnación G. Víllora |
collection | DOAJ |
description | The growth of Ce:(Lu _1−x Y _x ) _2 SiO _5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce ^3+ valence state is obtained. The growth under supercritical water lowers the temperature to less than half the melting point. In contrast, crystals grown from melt by the standard Czochralski technique possess intrinsic defects and undesirable Ce ^4+ ions as charge compensators. The growth of large-size single crystals with improved scintillation properties at a low cost is envisaged. |
format | Article |
id | doaj-art-d20661436f2e4492a4e5370820595554 |
institution | Kabale University |
issn | 1882-0786 |
language | English |
publishDate | 2024-01-01 |
publisher | IOP Publishing |
record_format | Article |
series | Applied Physics Express |
spelling | doaj-art-d20661436f2e4492a4e53708205955542025-01-08T10:56:37ZengIOP PublishingApplied Physics Express1882-07862024-01-01171212200710.35848/1882-0786/ad9b6cHigh-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal techniqueEncarnación G. Víllora0Makoto Saito1Kiyoshi Shimamura2National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, JapanMitsubishi Chemical Corp., 1000 Kamoshida, Yokohama, Kanagawa, 227-8502, JapanNational Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, JapanThe growth of Ce:(Lu _1−x Y _x ) _2 SiO _5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce ^3+ valence state is obtained. The growth under supercritical water lowers the temperature to less than half the melting point. In contrast, crystals grown from melt by the standard Czochralski technique possess intrinsic defects and undesirable Ce ^4+ ions as charge compensators. The growth of large-size single crystals with improved scintillation properties at a low cost is envisaged.https://doi.org/10.35848/1882-0786/ad9b6cscintillatorhydrothermal crystal growthpositron emission tomography |
spellingShingle | Encarnación G. Víllora Makoto Saito Kiyoshi Shimamura High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique Applied Physics Express scintillator hydrothermal crystal growth positron emission tomography |
title | High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique |
title_full | High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique |
title_fullStr | High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique |
title_full_unstemmed | High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique |
title_short | High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique |
title_sort | high quality 100 ce3 lu1 xyx 2sio5 single crystals grown by the hydrothermal technique |
topic | scintillator hydrothermal crystal growth positron emission tomography |
url | https://doi.org/10.35848/1882-0786/ad9b6c |
work_keys_str_mv | AT encarnaciongvillora highquality100ce3lu1xyx2sio5singlecrystalsgrownbythehydrothermaltechnique AT makotosaito highquality100ce3lu1xyx2sio5singlecrystalsgrownbythehydrothermaltechnique AT kiyoshishimamura highquality100ce3lu1xyx2sio5singlecrystalsgrownbythehydrothermaltechnique |