High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique

The growth of Ce:(Lu _1−x Y _x ) _2 SiO _5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce ^3+ valence state is obtained. The growth u...

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Main Authors: Encarnación G. Víllora, Makoto Saito, Kiyoshi Shimamura
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
Online Access:https://doi.org/10.35848/1882-0786/ad9b6c
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author Encarnación G. Víllora
Makoto Saito
Kiyoshi Shimamura
author_facet Encarnación G. Víllora
Makoto Saito
Kiyoshi Shimamura
author_sort Encarnación G. Víllora
collection DOAJ
description The growth of Ce:(Lu _1−x Y _x ) _2 SiO _5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce ^3+ valence state is obtained. The growth under supercritical water lowers the temperature to less than half the melting point. In contrast, crystals grown from melt by the standard Czochralski technique possess intrinsic defects and undesirable Ce ^4+ ions as charge compensators. The growth of large-size single crystals with improved scintillation properties at a low cost is envisaged.
format Article
id doaj-art-d20661436f2e4492a4e5370820595554
institution Kabale University
issn 1882-0786
language English
publishDate 2024-01-01
publisher IOP Publishing
record_format Article
series Applied Physics Express
spelling doaj-art-d20661436f2e4492a4e53708205955542025-01-08T10:56:37ZengIOP PublishingApplied Physics Express1882-07862024-01-01171212200710.35848/1882-0786/ad9b6cHigh-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal techniqueEncarnación G. Víllora0Makoto Saito1Kiyoshi Shimamura2National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, JapanMitsubishi Chemical Corp., 1000 Kamoshida, Yokohama, Kanagawa, 227-8502, JapanNational Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, JapanThe growth of Ce:(Lu _1−x Y _x ) _2 SiO _5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce ^3+ valence state is obtained. The growth under supercritical water lowers the temperature to less than half the melting point. In contrast, crystals grown from melt by the standard Czochralski technique possess intrinsic defects and undesirable Ce ^4+ ions as charge compensators. The growth of large-size single crystals with improved scintillation properties at a low cost is envisaged.https://doi.org/10.35848/1882-0786/ad9b6cscintillatorhydrothermal crystal growthpositron emission tomography
spellingShingle Encarnación G. Víllora
Makoto Saito
Kiyoshi Shimamura
High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
Applied Physics Express
scintillator
hydrothermal crystal growth
positron emission tomography
title High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
title_full High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
title_fullStr High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
title_full_unstemmed High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
title_short High-quality 100% Ce3+:(Lu1−xYx)2SiO5 single crystals grown by the hydrothermal technique
title_sort high quality 100 ce3 lu1 xyx 2sio5 single crystals grown by the hydrothermal technique
topic scintillator
hydrothermal crystal growth
positron emission tomography
url https://doi.org/10.35848/1882-0786/ad9b6c
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AT kiyoshishimamura highquality100ce3lu1xyx2sio5singlecrystalsgrownbythehydrothermaltechnique