Research on the Isolation Technology for Reverse Conducting IGCT
Isolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certification test were carrie...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.007 |
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| _version_ | 1849224760895995904 |
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| author | CHEN Fanglin WU Yudong ZHANG Ming TANG Longgu CHEN Yongmin GAO Jianning |
| author_facet | CHEN Fanglin WU Yudong ZHANG Ming TANG Longgu CHEN Yongmin GAO Jianning |
| author_sort | CHEN Fanglin |
| collection | DOAJ |
| description | Isolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certification test were carried out on RC_GCTs wafers with 4 "and 6" substrates. The results show that the new method can increase the isolation voltage and reduce the difficulties both in the design and process. |
| format | Article |
| id | doaj-art-d04fc37fce994476b4a181a1b88846e1 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2015-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-d04fc37fce994476b4a181a1b88846e12025-08-25T06:55:25ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272015-01-01313582332331Research on the Isolation Technology for Reverse Conducting IGCTCHEN FanglinWU YudongZHANG MingTANG LongguCHEN YongminGAO JianningIsolation between GCT and FRD is the key technology in reverse conducting IGCT (RC_IGCT) developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certification test were carried out on RC_GCTs wafers with 4 "and 6" substrates. The results show that the new method can increase the isolation voltage and reduce the difficulties both in the design and process.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.007IGCTGCTreverse conductFRDisolation |
| spellingShingle | CHEN Fanglin WU Yudong ZHANG Ming TANG Longgu CHEN Yongmin GAO Jianning Research on the Isolation Technology for Reverse Conducting IGCT Kongzhi Yu Xinxi Jishu IGCT GCT reverse conduct FRD isolation |
| title | Research on the Isolation Technology for Reverse Conducting IGCT |
| title_full | Research on the Isolation Technology for Reverse Conducting IGCT |
| title_fullStr | Research on the Isolation Technology for Reverse Conducting IGCT |
| title_full_unstemmed | Research on the Isolation Technology for Reverse Conducting IGCT |
| title_short | Research on the Isolation Technology for Reverse Conducting IGCT |
| title_sort | research on the isolation technology for reverse conducting igct |
| topic | IGCT GCT reverse conduct FRD isolation |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.007 |
| work_keys_str_mv | AT chenfanglin researchontheisolationtechnologyforreverseconductingigct AT wuyudong researchontheisolationtechnologyforreverseconductingigct AT zhangming researchontheisolationtechnologyforreverseconductingigct AT tanglonggu researchontheisolationtechnologyforreverseconductingigct AT chenyongmin researchontheisolationtechnologyforreverseconductingigct AT gaojianning researchontheisolationtechnologyforreverseconductingigct |