Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method
In this paper, we limit our attention to full adders based on the GDI method, circuits that are commonly used in high-speed circuits and are more prone to noise. So far, a comprehensive review on noise immunity and ambient temperature change of full adders based on the GDI method has not been presen...
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| Format: | Article |
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Islamic Azad University Bushehr Branch
2024-02-01
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| Series: | مهندسی مخابرات جنوب |
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| Online Access: | https://sanad.iau.ir/journal/jce/Article/870008 |
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| author | Hashem Arfavi Seyed Mohammadali Riazi Roozbeh Hamzehyan |
| author_facet | Hashem Arfavi Seyed Mohammadali Riazi Roozbeh Hamzehyan |
| author_sort | Hashem Arfavi |
| collection | DOAJ |
| description | In this paper, we limit our attention to full adders based on the GDI method, circuits that are commonly used in high-speed circuits and are more prone to noise. So far, a comprehensive review on noise immunity and ambient temperature change of full adders based on the GDI method has not been presented, and most of the studies have compared their proposed design with other full adders, which are mainly not based on the GDI method. These full adder cells were evaluated by various simulations such as supply voltage change, capacitive load change, ambient temperature change and process-voltage-temperature (PVT) changes in 45 nm CMOS technology. A noise immunity curve (NIC) was derived for full adder cells to identify better-performing full adder cells. The unity noise gain (UNG) was also investigated to evaluate the noise. Finally, a comprehensive comparison was made in terms of propagation delay, power consumption, power-delay product (PDP), voltage swing, sensitivity to process changes and noise for full adders based on the GDI method. The obtained results can be useful in the decisions of integrated circuit designers to choose the appropriate structure of the full adder based on the GDI method |
| format | Article |
| id | doaj-art-cb5e0bee87e044929f239c4f855237d8 |
| institution | Kabale University |
| issn | 2980-9231 |
| language | fas |
| publishDate | 2024-02-01 |
| publisher | Islamic Azad University Bushehr Branch |
| record_format | Article |
| series | مهندسی مخابرات جنوب |
| spelling | doaj-art-cb5e0bee87e044929f239c4f855237d82025-01-11T05:11:13ZfasIslamic Azad University Bushehr Branchمهندسی مخابرات جنوب2980-92312024-02-0113504766Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI MethodHashem Arfavi0Seyed Mohammadali Riazi1Roozbeh Hamzehyan2Department of Electrical Engineering, Bushehr Branch, Islamic Azad University, Bushehr, IranDepartment of Electrical Engineering, Bushehr Branch, Islamic Azad University, Bushehr, IranDepartment of Electrical Engineering, Bushehr Branch, Islamic Azad University, Bushehr, IranIn this paper, we limit our attention to full adders based on the GDI method, circuits that are commonly used in high-speed circuits and are more prone to noise. So far, a comprehensive review on noise immunity and ambient temperature change of full adders based on the GDI method has not been presented, and most of the studies have compared their proposed design with other full adders, which are mainly not based on the GDI method. These full adder cells were evaluated by various simulations such as supply voltage change, capacitive load change, ambient temperature change and process-voltage-temperature (PVT) changes in 45 nm CMOS technology. A noise immunity curve (NIC) was derived for full adder cells to identify better-performing full adder cells. The unity noise gain (UNG) was also investigated to evaluate the noise. Finally, a comprehensive comparison was made in terms of propagation delay, power consumption, power-delay product (PDP), voltage swing, sensitivity to process changes and noise for full adders based on the GDI method. The obtained results can be useful in the decisions of integrated circuit designers to choose the appropriate structure of the full adder based on the GDI methodhttps://sanad.iau.ir/journal/jce/Article/870008noise immunity curve (nic)gdi methodpower-delay product (pdp)unity noise gain (ung)full adder |
| spellingShingle | Hashem Arfavi Seyed Mohammadali Riazi Roozbeh Hamzehyan Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method مهندسی مخابرات جنوب noise immunity curve (nic) gdi method power-delay product (pdp) unity noise gain (ung) full adder |
| title | Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method |
| title_full | Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method |
| title_fullStr | Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method |
| title_full_unstemmed | Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method |
| title_short | Evaluation of Temperature, Disturbance and Noise Effect in Full Adders Based on GDI Method |
| title_sort | evaluation of temperature disturbance and noise effect in full adders based on gdi method |
| topic | noise immunity curve (nic) gdi method power-delay product (pdp) unity noise gain (ung) full adder |
| url | https://sanad.iau.ir/journal/jce/Article/870008 |
| work_keys_str_mv | AT hashemarfavi evaluationoftemperaturedisturbanceandnoiseeffectinfulladdersbasedongdimethod AT seyedmohammadaliriazi evaluationoftemperaturedisturbanceandnoiseeffectinfulladdersbasedongdimethod AT roozbehhamzehyan evaluationoftemperaturedisturbanceandnoiseeffectinfulladdersbasedongdimethod |