Thin film field-effect transistor with ZnO:Li ferroelectric channel

Thin film field-effect transistor with ZnO:Li ferroelectric channel

An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization [For...

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Bibliographic Details
Main Authors:	Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan
Format:	Article
Language:	English
Published:	World Scientific Publishing 2025-02-01
Series:	Journal of Advanced Dielectrics
Subjects:	Transparent field-effect transistor ZnO thin films ferroelectric semiconductor channel transparent electronics
Online Access:	https://www.worldscientific.com/doi/10.1142/S2010135X24500097
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