Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer
Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the...
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Polish Academy of Sciences
2024-06-01
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| Series: | Archives of Metallurgy and Materials |
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| Online Access: | https://journals.pan.pl/Content/131843/AMM-2024-2-14-Byung%20Joon%20Choi.pdf |
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| author | Hogyoung Kim Ye Bin Won Byung Joon Choi |
| author_facet | Hogyoung Kim Ye Bin Won Byung Joon Choi |
| author_sort | Hogyoung Kim |
| collection | DOAJ |
| description | Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the Pt/ZnO/GaN heterojunctions were electrically characterized. The analyses on the current–voltage (I–V) and capacitance (C–V) data showed that the forward I–V conduction was involved with the inhomogeneous Schottky barrier. The higher density of interface states from I–V data than that from C–V data was attributed to nonuniform distribution of interface states. In addition, high density of interface states caused localized high electric field, caused higher Poole Frenkel emission coefficients than the theoretical one. |
| format | Article |
| id | doaj-art-c93f3d1f1ab74fd2a1f695e3246c190d |
| institution | Kabale University |
| issn | 2300-1909 |
| language | English |
| publishDate | 2024-06-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Archives of Metallurgy and Materials |
| spelling | doaj-art-c93f3d1f1ab74fd2a1f695e3246c190d2024-12-27T14:07:46ZengPolish Academy of SciencesArchives of Metallurgy and Materials2300-19092024-06-01vol. 69No 2459463https://doi.org/10.24425/amm.2024.149766Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO InterlayerHogyoung Kim0https://orcid.org/0000-0003-0066-2584Ye Bin Won1https://orcid.org/0000-0003-1880-4333Byung Joon Choi2https://orcid.org/0000-0003-1920-8162Seoul National University of Science and Technology, Department of Visual Optics, Seoul 01811, KoreaSeoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, KoreaSeoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, KoreaSemiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the Pt/ZnO/GaN heterojunctions were electrically characterized. The analyses on the current–voltage (I–V) and capacitance (C–V) data showed that the forward I–V conduction was involved with the inhomogeneous Schottky barrier. The higher density of interface states from I–V data than that from C–V data was attributed to nonuniform distribution of interface states. In addition, high density of interface states caused localized high electric field, caused higher Poole Frenkel emission coefficients than the theoretical one.https://journals.pan.pl/Content/131843/AMM-2024-2-14-Byung%20Joon%20Choi.pdfzno interlayerganinhomogeneous schottky barrierinterface states |
| spellingShingle | Hogyoung Kim Ye Bin Won Byung Joon Choi Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer Archives of Metallurgy and Materials zno interlayer gan inhomogeneous schottky barrier interface states |
| title | Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer |
| title_full | Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer |
| title_fullStr | Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer |
| title_full_unstemmed | Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer |
| title_short | Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer |
| title_sort | barrier inhomogeneity of pt gan junctions with a low temperature ald grown zno interlayer |
| topic | zno interlayer gan inhomogeneous schottky barrier interface states |
| url | https://journals.pan.pl/Content/131843/AMM-2024-2-14-Byung%20Joon%20Choi.pdf |
| work_keys_str_mv | AT hogyoungkim barrierinhomogeneityofptganjunctionswithalowtemperaturealdgrownznointerlayer AT yebinwon barrierinhomogeneityofptganjunctionswithalowtemperaturealdgrownznointerlayer AT byungjoonchoi barrierinhomogeneityofptganjunctionswithalowtemperaturealdgrownznointerlayer |