Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD

Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD

This paper presents the theoretical analysis and experimental validation of a harmonic-terminated high-efficiency and high-power microwave rectifier. The rectifier is designed utilizing a single-circuit gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). Capitalizing on the strengths...

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Bibliographic Details
Main Authors: Xiaochen Yu, Ya-Xun Lin, Ivona Z. Mitrovic, Steve Hall, Jenq-Horng Liang, Der-Sheng Chao, Minzhang Liu, Xiantao Yang, Yi Huang, Ta-Jen Yen, Jiafeng Zhou
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Wireless power transfer
microwave rectifier
GaN
Schottky barrier diode
high-power
Online Access:https://ieeexplore.ieee.org/document/10744557/
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