Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD

Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD

This paper presents the theoretical analysis and experimental validation of a harmonic-terminated high-efficiency and high-power microwave rectifier. The rectifier is designed utilizing a single-circuit gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). Capitalizing on the strengths...

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Bibliographic Details
Main Authors: Xiaochen Yu, Ya-Xun Lin, Ivona Z. Mitrovic, Steve Hall, Jenq-Horng Liang, Der-Sheng Chao, Minzhang Liu, Xiantao Yang, Yi Huang, Ta-Jen Yen, Jiafeng Zhou
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Wireless power transfer
microwave rectifier
GaN
Schottky barrier diode
high-power
Online Access:https://ieeexplore.ieee.org/document/10744557/
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Summary:This paper presents the theoretical analysis and experimental validation of a harmonic-terminated high-efficiency and high-power microwave rectifier. The rectifier is designed utilizing a single-circuit gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). Capitalizing on the strengths of wide bandgap, high mobility and high saturation velocity of the GaN, the SBD achieved a high breakdown voltage of 180 V and an ultra-low turn-on voltage of 0.23 V (at 1 A/cm<inline-formula><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula>). These characteristics enhance rectification performance across both high and low input power regions, making it suitable for wireless power transfer (WPT) applications. The optimized high-power microwave rectifier incorporates this advanced diode, featuring a wide input power range and high efficiency. The proposed rectifier structure includes a single-shunt self-developed SBD and topology with a harmonics compression network. It accomplishes a maximum RF-to-DC power conversion efficiency of 70.4&#x0025; with an input power of 42 dBm (15.8 W) at 0.9 GHz. The highest efficient power handling ability is up to 20 W with an 18 dB (25&#x2013;43 dBm) dynamic range achieving an efficiency exceeding 50&#x0025;, demonstrating the high potential of high-power GaN SBDs for wireless high-power transfer for future microwave WPT applications.
ISSN:2644-1314

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