Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors
In this paper, we present a study on a retention characteristics dependent on a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A m...
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| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10753578/ |
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