Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors

Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors

In this paper, we present a study on a retention characteristics dependent on a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A m...

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Bibliographic Details
Main Authors:	Gyoungyeop do, Danyoung Cha, Kunhee Tae, Nayeong Lee, Seokhyun Byun, Jeongseok Pi, Sungsik Lee
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Series:	IEEE Access
Subjects:	Synaptic thin-film transistor high-κ gate-insulator stack hafnium-doped zinc oxide tunneling oxide retention time sensitivity
Online Access:	https://ieeexplore.ieee.org/document/10753578/
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