Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors
In this paper, we present a study on a retention characteristics dependent on a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A m...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10753578/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1846152003953098752 |
|---|---|
| author | Gyoungyeop do Danyoung Cha Kunhee Tae Nayeong Lee Seokhyun Byun Jeongseok Pi Sungsik Lee |
| author_facet | Gyoungyeop do Danyoung Cha Kunhee Tae Nayeong Lee Seokhyun Byun Jeongseok Pi Sungsik Lee |
| author_sort | Gyoungyeop do |
| collection | DOAJ |
| description | In this paper, we present a study on a retention characteristics dependent on a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A memory function of Syn-TFTs can be implemented in a gate insulator, where electrons are trapped with applying positive programming pulses to a gate terminal. This is usually realized in a flash memory structure with the tunneling oxide (T-Ox). As a simple structure, the gate insulator without the T-Ox can also be used, where traps associated with defects are intentionally playing the role as charge trapping sites. Here, depending on the presence or absence of the T-Ox in the gate insulator, it is anticipated that both the weigh-update characteristics (e.g., a programming speed) and retention characteristics (e.g., a retention time) of the Syn-TFTs are varied. To verify this, the pulsed characteristics of the fabricated Syn-TFTs with different gate-insulator structure (i.e., the fabricated Syn-TFTs with and without the T-Ox) are monitored experimentally. From experimental results, it is found that the programming speed of the Syn-TFT without the T-Ox is faster compared to the Syn-TFT with the T-Ox, meaning a higher sensitivity. On the other hand, the extracted retention time of the Syn-TFT with the T-Ox is longer than that without the T-Ox. These suggest a trade-off relation between the sensitivity and retention time depending on whether the T-Ox exists in the gate insulator stack. |
| format | Article |
| id | doaj-art-c785b3386a744a7e9d460595797ed88a |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-c785b3386a744a7e9d460595797ed88a2024-11-27T00:00:35ZengIEEEIEEE Access2169-35362024-01-011217057017058010.1109/ACCESS.2024.349890310753578Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film TransistorsGyoungyeop do0https://orcid.org/0009-0008-6997-3130Danyoung Cha1https://orcid.org/0000-0002-4713-7579Kunhee Tae2https://orcid.org/0009-0002-8938-4110Nayeong Lee3https://orcid.org/0009-0009-9443-1381Seokhyun Byun4https://orcid.org/0009-0007-3601-4788Jeongseok Pi5https://orcid.org/0009-0000-5639-2793Sungsik Lee6https://orcid.org/0000-0002-5523-8476Department of Electronics Engineering, Pusan National University, Busan, South KoreaDepartment of Electronics Engineering, Pusan National University, Busan, South KoreaDepartment of Electronics Engineering, Pusan National University, Busan, South KoreaDepartment of Electronics Engineering, Pusan National University, Busan, South KoreaDepartment of Electronics Engineering, Pusan National University, Busan, South KoreaDepartment of Electronics Engineering, Pusan National University, Busan, South KoreaDepartment of Electronics Engineering, Pusan National University, Busan, South KoreaIn this paper, we present a study on a retention characteristics dependent on a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> gate insulator stack in synaptic thin-film transistors (Syn-TFTs) with a Hf-ZnO channel layer. A memory function of Syn-TFTs can be implemented in a gate insulator, where electrons are trapped with applying positive programming pulses to a gate terminal. This is usually realized in a flash memory structure with the tunneling oxide (T-Ox). As a simple structure, the gate insulator without the T-Ox can also be used, where traps associated with defects are intentionally playing the role as charge trapping sites. Here, depending on the presence or absence of the T-Ox in the gate insulator, it is anticipated that both the weigh-update characteristics (e.g., a programming speed) and retention characteristics (e.g., a retention time) of the Syn-TFTs are varied. To verify this, the pulsed characteristics of the fabricated Syn-TFTs with different gate-insulator structure (i.e., the fabricated Syn-TFTs with and without the T-Ox) are monitored experimentally. From experimental results, it is found that the programming speed of the Syn-TFT without the T-Ox is faster compared to the Syn-TFT with the T-Ox, meaning a higher sensitivity. On the other hand, the extracted retention time of the Syn-TFT with the T-Ox is longer than that without the T-Ox. These suggest a trade-off relation between the sensitivity and retention time depending on whether the T-Ox exists in the gate insulator stack.https://ieeexplore.ieee.org/document/10753578/Synaptic thin-film transistorhigh-κ gate-insulator stackhafnium-doped zinc oxidetunneling oxideretention timesensitivity |
| spellingShingle | Gyoungyeop do Danyoung Cha Kunhee Tae Nayeong Lee Seokhyun Byun Jeongseok Pi Sungsik Lee Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors IEEE Access Synaptic thin-film transistor high-κ gate-insulator stack hafnium-doped zinc oxide tunneling oxide retention time sensitivity |
| title | Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors |
| title_full | Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors |
| title_fullStr | Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors |
| title_full_unstemmed | Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors |
| title_short | Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors |
| title_sort | retention characteristics dependent on high x03ba gate insulator stack in hf zno synaptic thin film transistors |
| topic | Synaptic thin-film transistor high-κ gate-insulator stack hafnium-doped zinc oxide tunneling oxide retention time sensitivity |
| url | https://ieeexplore.ieee.org/document/10753578/ |
| work_keys_str_mv | AT gyoungyeopdo retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors AT danyoungcha retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors AT kunheetae retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors AT nayeonglee retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors AT seokhyunbyun retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors AT jeongseokpi retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors AT sungsiklee retentioncharacteristicsdependentonhighx03bagateinsulatorstackinhfznosynapticthinfilmtransistors |