SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION
With the development of electronic packaging towards high power and high density,the interconnection structure is faced with the reliability problem induced by electromigration. Most traditional simulation methods are based on a single or two physical fields. Herein,a simulation method for obtaining...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Journal of Mechanical Strength
2020-01-01
|
| Series: | Jixie qiangdu |
| Subjects: | |
| Online Access: | http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2020.03.013 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841535808994017280 |
|---|---|
| author | YANG Jing JIANG YiMing CHEN Gang XU WeiLing |
| author_facet | YANG Jing JIANG YiMing CHEN Gang XU WeiLing |
| author_sort | YANG Jing |
| collection | DOAJ |
| description | With the development of electronic packaging towards high power and high density,the interconnection structure is faced with the reliability problem induced by electromigration. Most traditional simulation methods are based on a single or two physical fields. Herein,a simulation method for obtaining the distribution of atomic concentration in interconnection structures under the effect of complete coupling of electric field,temperature field,stress field and atomic concentration field was proposed to predict the void at the minimum value of atomic concentration using finite element method. This method is applied to interconnect lead structure and interconnect welding ball structure,respectively. And the accuracy and reliability of this method are verified by comparing experimental phenomena,which provides a precise prediction method for the reliability analysis of integrated circuit design. |
| format | Article |
| id | doaj-art-c5a5d64f07234b22871f319a1e07f7d3 |
| institution | Kabale University |
| issn | 1001-9669 |
| language | zho |
| publishDate | 2020-01-01 |
| publisher | Editorial Office of Journal of Mechanical Strength |
| record_format | Article |
| series | Jixie qiangdu |
| spelling | doaj-art-c5a5d64f07234b22871f319a1e07f7d32025-01-15T02:28:02ZzhoEditorial Office of Journal of Mechanical StrengthJixie qiangdu1001-96692020-01-014259159630608207SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATIONYANG JingJIANG YiMingCHEN GangXU WeiLingWith the development of electronic packaging towards high power and high density,the interconnection structure is faced with the reliability problem induced by electromigration. Most traditional simulation methods are based on a single or two physical fields. Herein,a simulation method for obtaining the distribution of atomic concentration in interconnection structures under the effect of complete coupling of electric field,temperature field,stress field and atomic concentration field was proposed to predict the void at the minimum value of atomic concentration using finite element method. This method is applied to interconnect lead structure and interconnect welding ball structure,respectively. And the accuracy and reliability of this method are verified by comparing experimental phenomena,which provides a precise prediction method for the reliability analysis of integrated circuit design.http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2020.03.013Electromigration failureFinite elementMultiple-physical fieldsAtomic concentration |
| spellingShingle | YANG Jing JIANG YiMing CHEN Gang XU WeiLing SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION Jixie qiangdu Electromigration failure Finite element Multiple-physical fields Atomic concentration |
| title | SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION |
| title_full | SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION |
| title_fullStr | SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION |
| title_full_unstemmed | SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION |
| title_short | SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION |
| title_sort | simulation analysis of the void location during the electromigration based on atomic concentration |
| topic | Electromigration failure Finite element Multiple-physical fields Atomic concentration |
| url | http://www.jxqd.net.cn/thesisDetails#10.16579/j.issn.1001.9669.2020.03.013 |
| work_keys_str_mv | AT yangjing simulationanalysisofthevoidlocationduringtheelectromigrationbasedonatomicconcentration AT jiangyiming simulationanalysisofthevoidlocationduringtheelectromigrationbasedonatomicconcentration AT chengang simulationanalysisofthevoidlocationduringtheelectromigrationbasedonatomicconcentration AT xuweiling simulationanalysisofthevoidlocationduringtheelectromigrationbasedonatomicconcentration |