Jing, Y., YiMing, J., Gang, C., & WeiLing, X. SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION. Editorial Office of Journal of Mechanical Strength.
Chicago Style (17th ed.) CitationJing, YANG, JIANG YiMing, CHEN Gang, and XU WeiLing. SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION. Editorial Office of Journal of Mechanical Strength.
MLA (9th ed.) CitationJing, YANG, et al. SIMULATION ANALYSIS OF THE VOID LOCATION DURING THE ELECTROMIGRATION BASED ON ATOMIC CONCENTRATION. Editorial Office of Journal of Mechanical Strength.
Warning: These citations may not always be 100% accurate.