Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications
Nanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-type floating gate transistor (Mesh-FGT) designed to...
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2025-07-01
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| author | Soyeon Jeong Jaemin Kim Hyeongjin Chae Taehwan Koo Juyeong Chae Moongyu Jang |
| author_facet | Soyeon Jeong Jaemin Kim Hyeongjin Chae Taehwan Koo Juyeong Chae Moongyu Jang |
| author_sort | Soyeon Jeong |
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| description | Nanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-type floating gate transistor (Mesh-FGT) designed to emulate the characteristics of NPFG transistors. Individual floating gates with dimensions of 3 µm × 3 µm are arranged in an array configuration to form the floating gate structure. The Mesh-FGT is composed of an Al/Pt/Cr/HfO<sub>2</sub>/Pt/Cr/HfO<sub>2</sub>/SiO<sub>2</sub>/SOI (silicon-on-insulator) stack. Threshold voltages (Vth) extracted from the transfer and output curves followed Gaussian distributions with means of 0.063 V (σ = 0.100 V) and 1.810 V (σ = 0.190 V) for the erase (ERS) and program (PGM) states, respectively. Synaptic potentiation and depression were successfully demonstrated in a multi-level implementation by varying the drain current (I<sub>ds</sub>) and Vth. The Mesh-FGT exhibited high immunity to leakage current, excellent repeatability and retention, and a stable memory window that initially measured 2.4 V. These findings underscore the potential of the Mesh-FGT as a high-performance neuromorphic device, with promising applications in array device architectures and neuromorphic neural network implementations. |
| format | Article |
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| institution | Kabale University |
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| language | English |
| publishDate | 2025-07-01 |
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| spelling | doaj-art-c59a0132e49f456c94391acf3c61d8c02025-08-20T04:00:54ZengMDPI AGApplied Sciences2076-34172025-07-011515817410.3390/app15158174Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device ApplicationsSoyeon Jeong0Jaemin Kim1Hyeongjin Chae2Taehwan Koo3Juyeong Chae4Moongyu Jang5School of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of KoreaSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of KoreaSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of KoreaSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of KoreaSchool of Nano Convergence Technology, Hallym University, Chuncheon 24252, Republic of KoreaSchool of Semiconductor & Display Technology, Hallym University, Chuncheon 24252, Republic of KoreaNanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-type floating gate transistor (Mesh-FGT) designed to emulate the characteristics of NPFG transistors. Individual floating gates with dimensions of 3 µm × 3 µm are arranged in an array configuration to form the floating gate structure. The Mesh-FGT is composed of an Al/Pt/Cr/HfO<sub>2</sub>/Pt/Cr/HfO<sub>2</sub>/SiO<sub>2</sub>/SOI (silicon-on-insulator) stack. Threshold voltages (Vth) extracted from the transfer and output curves followed Gaussian distributions with means of 0.063 V (σ = 0.100 V) and 1.810 V (σ = 0.190 V) for the erase (ERS) and program (PGM) states, respectively. Synaptic potentiation and depression were successfully demonstrated in a multi-level implementation by varying the drain current (I<sub>ds</sub>) and Vth. The Mesh-FGT exhibited high immunity to leakage current, excellent repeatability and retention, and a stable memory window that initially measured 2.4 V. These findings underscore the potential of the Mesh-FGT as a high-performance neuromorphic device, with promising applications in array device architectures and neuromorphic neural network implementations.https://www.mdpi.com/2076-3417/15/15/8174neuromorphicsynaptic weightmesh-type floating gate transistorflash transistor |
| spellingShingle | Soyeon Jeong Jaemin Kim Hyeongjin Chae Taehwan Koo Juyeong Chae Moongyu Jang Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications Applied Sciences neuromorphic synaptic weight mesh-type floating gate transistor flash transistor |
| title | Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications |
| title_full | Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications |
| title_fullStr | Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications |
| title_full_unstemmed | Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications |
| title_short | Electrical Characteristics of Mesh-Type Floating Gate Transistors for High-Performance Synaptic Device Applications |
| title_sort | electrical characteristics of mesh type floating gate transistors for high performance synaptic device applications |
| topic | neuromorphic synaptic weight mesh-type floating gate transistor flash transistor |
| url | https://www.mdpi.com/2076-3417/15/15/8174 |
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