Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field
Abstract The insulating properties of silicone gel used for silicon carbide‐insulated gate bipolar transistors encapsulation may deteriorate seriously under ultra‐fast pulsed electric fields. The essence of insulation degradation lies in the deterioration of materials caused by dynamic phenomena at...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-12-01
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| Series: | High Voltage |
| Online Access: | https://doi.org/10.1049/hve2.12484 |
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