Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field
Abstract The insulating properties of silicone gel used for silicon carbide‐insulated gate bipolar transistors encapsulation may deteriorate seriously under ultra‐fast pulsed electric fields. The essence of insulation degradation lies in the deterioration of materials caused by dynamic phenomena at...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-12-01
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| Series: | High Voltage |
| Online Access: | https://doi.org/10.1049/hve2.12484 |
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| _version_ | 1846101797090885632 |
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| author | Teng Gao Dongxin He Zhe Xu Junyu Wei Shijie Xie Gilbert Teyssède Zhizhen Liu Bin Cui |
| author_facet | Teng Gao Dongxin He Zhe Xu Junyu Wei Shijie Xie Gilbert Teyssède Zhizhen Liu Bin Cui |
| author_sort | Teng Gao |
| collection | DOAJ |
| description | Abstract The insulating properties of silicone gel used for silicon carbide‐insulated gate bipolar transistors encapsulation may deteriorate seriously under ultra‐fast pulsed electric fields. The essence of insulation degradation lies in the deterioration of materials caused by dynamic phenomena at microscopic scale, such as charge trapping and detrapping. Different from the steady‐state operating condition, insulating materials exhibit a sharp decrease in their insulating properties when subjected to a rapidly changing electric field. To investigate the insulation failure of silicone gel materials under an ultra‐fast pulsed electric field, Marcus hopping mechanism for charge response is proposed. By calculating the relaxation time with different defects, we characterise the degradation of the materials. According to the force analysis of space charge, the authors establish a relationship between insulation failures and charge relaxation time. Combined with the experimental results on electrical treeing in silicone gel, the feasibility of the theory is verified. The experimental phenomenon can be well explained, that is, the initial voltage of the electrical trees decreased sharply with shortening the edge time of the pulsed electric field, especially on the nanosecond time scale. |
| format | Article |
| id | doaj-art-c487046b5ac643318859de56fe0ab84f |
| institution | Kabale University |
| issn | 2397-7264 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | High Voltage |
| spelling | doaj-art-c487046b5ac643318859de56fe0ab84f2024-12-28T16:32:56ZengWileyHigh Voltage2397-72642024-12-01961383139210.1049/hve2.12484Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric fieldTeng Gao0Dongxin He1Zhe Xu2Junyu Wei3Shijie Xie4Gilbert Teyssède5Zhizhen Liu6Bin Cui7School of Information Engineering Shandong Youth University of Political Science Jinan ChinaShandong Provincial Key Laboratory of UHV Transmission Technology and Equipment School of Electrical Engineering Shandong University Jinan ChinaShandong Provincial Key Laboratory of UHV Transmission Technology and Equipment School of Electrical Engineering Shandong University Jinan ChinaShandong Provincial Key Laboratory of UHV Transmission Technology and Equipment School of Electrical Engineering Shandong University Jinan ChinaState Key Laboratory of Crystal Materials School of Physics Shandong University Jinan ChinaUPS INPT CNRS LAPLACE (Laboratoire Plasma et Conversion d’Energie) University of Toulouse Toulouse FranceSchool of Electrical Engineering Shandong University Jinan ChinaState Key Laboratory of Crystal Materials School of Physics Shandong University Jinan ChinaAbstract The insulating properties of silicone gel used for silicon carbide‐insulated gate bipolar transistors encapsulation may deteriorate seriously under ultra‐fast pulsed electric fields. The essence of insulation degradation lies in the deterioration of materials caused by dynamic phenomena at microscopic scale, such as charge trapping and detrapping. Different from the steady‐state operating condition, insulating materials exhibit a sharp decrease in their insulating properties when subjected to a rapidly changing electric field. To investigate the insulation failure of silicone gel materials under an ultra‐fast pulsed electric field, Marcus hopping mechanism for charge response is proposed. By calculating the relaxation time with different defects, we characterise the degradation of the materials. According to the force analysis of space charge, the authors establish a relationship between insulation failures and charge relaxation time. Combined with the experimental results on electrical treeing in silicone gel, the feasibility of the theory is verified. The experimental phenomenon can be well explained, that is, the initial voltage of the electrical trees decreased sharply with shortening the edge time of the pulsed electric field, especially on the nanosecond time scale.https://doi.org/10.1049/hve2.12484 |
| spellingShingle | Teng Gao Dongxin He Zhe Xu Junyu Wei Shijie Xie Gilbert Teyssède Zhizhen Liu Bin Cui Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field High Voltage |
| title | Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field |
| title_full | Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field |
| title_fullStr | Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field |
| title_full_unstemmed | Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field |
| title_short | Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field |
| title_sort | degradation induced by charge relaxation in silicone gels under the ultra fast pulsed electric field |
| url | https://doi.org/10.1049/hve2.12484 |
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