Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>...
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2020-01-01
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| author | K. Akshay Shreepad Karmalkar |
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| description | We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>; the inter-layer interface of this insulator has a negative charge-sheet, whose magnitude is easily controlled via the insulator deposition temperature. This charge-sheet depletes the n-pillar. Two potential advantages of this structural modification are brought out. First, it can avoid the problems related to SiC SJ’s p-pillar fabrication. Second, it can lower the specific-on resistance, <inline-formula> <tex-math notation="LaTeX">$R_{ONSP}$ </tex-math></inline-formula>, below that of SJ by 5–45 %, since SiC technology allows the insulator to be thinner than the p-pillar. The critical field, <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula>, in SiC is > 10 times higher than that in Si. We give an analytical breakdown voltage, <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula>, model, which shows that the <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> sensitivity to charge imbalance due to inevitable process variations is inversely proportional to <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula>; hence, this sensitivity of CSSJ in SiC is > 10 times lower than that in Si. On the other hand, we give numerical simulations to establish that, in spite of <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula> differences, the SiC CSSJ inherits the advantage of upto 15% higher <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> compared to SiC SJ, from its Si counterparts. We show how our prior analytical procedure of designing a SJ can be adapted to design a CSSJ having a lower <inline-formula> <tex-math notation="LaTeX">$R_{ONSP}$ </tex-math></inline-formula> than the SJ, at a specified <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> in 1–10 kV range and charge imbalance ≤ 20 %. Our work should strengthen the motivation for fabricating the CSSJ in SiC. |
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| institution | Kabale University |
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| publishDate | 2020-01-01 |
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| spelling | doaj-art-c4702b72f6bf4218831bfdb98c9f79d02025-01-16T00:00:51ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-0181129113710.1109/JEDS.2020.30218279186681Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and DesignK. Akshay0https://orcid.org/0000-0002-4339-9766Shreepad Karmalkar1https://orcid.org/0000-0002-6400-8955Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Madras, Chennai, IndiaWe discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>; the inter-layer interface of this insulator has a negative charge-sheet, whose magnitude is easily controlled via the insulator deposition temperature. This charge-sheet depletes the n-pillar. Two potential advantages of this structural modification are brought out. First, it can avoid the problems related to SiC SJ’s p-pillar fabrication. Second, it can lower the specific-on resistance, <inline-formula> <tex-math notation="LaTeX">$R_{ONSP}$ </tex-math></inline-formula>, below that of SJ by 5–45 %, since SiC technology allows the insulator to be thinner than the p-pillar. The critical field, <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula>, in SiC is > 10 times higher than that in Si. We give an analytical breakdown voltage, <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula>, model, which shows that the <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> sensitivity to charge imbalance due to inevitable process variations is inversely proportional to <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula>; hence, this sensitivity of CSSJ in SiC is > 10 times lower than that in Si. On the other hand, we give numerical simulations to establish that, in spite of <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula> differences, the SiC CSSJ inherits the advantage of upto 15% higher <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> compared to SiC SJ, from its Si counterparts. We show how our prior analytical procedure of designing a SJ can be adapted to design a CSSJ having a lower <inline-formula> <tex-math notation="LaTeX">$R_{ONSP}$ </tex-math></inline-formula> than the SJ, at a specified <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> in 1–10 kV range and charge imbalance ≤ 20 %. Our work should strengthen the motivation for fabricating the CSSJ in SiC.https://ieeexplore.ieee.org/document/9186681/4H-SiCbreakdown voltagespecific on-resistanceTCAD simulationanalytical modelcharge imbalance |
| spellingShingle | K. Akshay Shreepad Karmalkar Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design IEEE Journal of the Electron Devices Society 4H-SiC breakdown voltage specific on-resistance TCAD simulation analytical model charge imbalance |
| title | Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design |
| title_full | Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design |
| title_fullStr | Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design |
| title_full_unstemmed | Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design |
| title_short | Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design |
| title_sort | charge sheet super junction in 4h silicon carbide practicability modeling and design |
| topic | 4H-SiC breakdown voltage specific on-resistance TCAD simulation analytical model charge imbalance |
| url | https://ieeexplore.ieee.org/document/9186681/ |
| work_keys_str_mv | AT kakshay chargesheetsuperjunctionin4hsiliconcarbidepracticabilitymodelinganddesign AT shreepadkarmalkar chargesheetsuperjunctionin4hsiliconcarbidepracticabilitymodelinganddesign |