Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States
Abstract A memristive device is presented based on a Ti/GaOx/W stack with an amorphous GaOx layer deposited at a low temperature (250 °C) using plasma‐enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back‐end‐of‐line tech...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400765 |
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