Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency <i>f<sub>T</sub></i>, maximum oscillation fr...

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Bibliographic Details
Main Authors:	Zhanpeng Yan, Hongxia Liu, Menghao Huang, Shulong Wang, Shupeng Chen, Xilong Zhou, Junjie Huang, Chang Liu
Format:	Article
Language:	English
Published:	MDPI AG 2024-10-01
Series:	Micromachines
Subjects:	fully depleted silicon-on-insulator (FD-SOI) RF (radio frequency) total ionizing dose (TID) <i>f<sub>max</sub></i> (maximum oscillation frequency) <i>f<sub>T</sub></i> (cut-off frequency)
Online Access:	https://www.mdpi.com/2072-666X/15/11/1292
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