Orientation-selective spin-polarized edge states in monolayer NiI2
Abstract Spin-polarized edge states in two-dimensional materials hold promise for spintronics and quantum computing applications. Constructing stable edge states by tailoring two-dimensional semiconductor materials with bulk-boundary correspondence is a feasible approach. Recently layered NiI2 is su...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55372-x |
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| author | Yu Wang Xinlei Zhao Li Yao Huiru Liu Peng Cheng Yiqi Zhang Baojie Feng Fengjie Ma Jin Zhao Jiatao Sun Kehui Wu Lan Chen |
| author_facet | Yu Wang Xinlei Zhao Li Yao Huiru Liu Peng Cheng Yiqi Zhang Baojie Feng Fengjie Ma Jin Zhao Jiatao Sun Kehui Wu Lan Chen |
| author_sort | Yu Wang |
| collection | DOAJ |
| description | Abstract Spin-polarized edge states in two-dimensional materials hold promise for spintronics and quantum computing applications. Constructing stable edge states by tailoring two-dimensional semiconductor materials with bulk-boundary correspondence is a feasible approach. Recently layered NiI2 is suggested as a two-dimensional type-II multiferroic semiconductor with intrinsic spiral spin ordering and chirality-induced electric polarization. However, the one-dimensional spin-polarized edge states of multiferroic materials down to monolayer limit has not yet been studied. We report here that monolayer NiI2 was successfully synthesized on Au(111) by molecular beam epitaxy. Spin-polarized scanning tunneling microscopy/spectroscopy experiments visualize orientation-selective spin-polarized edge states in monolayer NiI2 islands. By performing first-principles calculations, we further confirm that spin-polarized edge states are selectively aligning along the Ni-terminated edges rather than the I-terminated edges. Our result will provide the opportunity to tune edge states by selected orientation and to develop spintronic devices in two-dimensional magnetic semiconductors. |
| format | Article |
| id | doaj-art-bfddb1fd343e4e668509e6d45c6286a6 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-bfddb1fd343e4e668509e6d45c6286a62025-01-05T12:36:42ZengNature PortfolioNature Communications2041-17232024-12-011511810.1038/s41467-024-55372-xOrientation-selective spin-polarized edge states in monolayer NiI2Yu Wang0Xinlei Zhao1Li Yao2Huiru Liu3Peng Cheng4Yiqi Zhang5Baojie Feng6Fengjie Ma7Jin Zhao8Jiatao Sun9Kehui Wu10Lan Chen11Institute of Physics, Chinese Academy of SciencesState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityDepartment of Physics, University of Science and Technology of ChinaInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesThe Center for Advanced Quantum Studies and Department of Physics, Beijing Normal UniversityDepartment of Physics, University of Science and Technology of ChinaSchool of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of TechnologyInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesAbstract Spin-polarized edge states in two-dimensional materials hold promise for spintronics and quantum computing applications. Constructing stable edge states by tailoring two-dimensional semiconductor materials with bulk-boundary correspondence is a feasible approach. Recently layered NiI2 is suggested as a two-dimensional type-II multiferroic semiconductor with intrinsic spiral spin ordering and chirality-induced electric polarization. However, the one-dimensional spin-polarized edge states of multiferroic materials down to monolayer limit has not yet been studied. We report here that monolayer NiI2 was successfully synthesized on Au(111) by molecular beam epitaxy. Spin-polarized scanning tunneling microscopy/spectroscopy experiments visualize orientation-selective spin-polarized edge states in monolayer NiI2 islands. By performing first-principles calculations, we further confirm that spin-polarized edge states are selectively aligning along the Ni-terminated edges rather than the I-terminated edges. Our result will provide the opportunity to tune edge states by selected orientation and to develop spintronic devices in two-dimensional magnetic semiconductors.https://doi.org/10.1038/s41467-024-55372-x |
| spellingShingle | Yu Wang Xinlei Zhao Li Yao Huiru Liu Peng Cheng Yiqi Zhang Baojie Feng Fengjie Ma Jin Zhao Jiatao Sun Kehui Wu Lan Chen Orientation-selective spin-polarized edge states in monolayer NiI2 Nature Communications |
| title | Orientation-selective spin-polarized edge states in monolayer NiI2 |
| title_full | Orientation-selective spin-polarized edge states in monolayer NiI2 |
| title_fullStr | Orientation-selective spin-polarized edge states in monolayer NiI2 |
| title_full_unstemmed | Orientation-selective spin-polarized edge states in monolayer NiI2 |
| title_short | Orientation-selective spin-polarized edge states in monolayer NiI2 |
| title_sort | orientation selective spin polarized edge states in monolayer nii2 |
| url | https://doi.org/10.1038/s41467-024-55372-x |
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