Promoting effect of interfacial hole accumulation on photoelectrochemical water oxidation in BiVO4 and Mo-doped BiVO4

Promoting effect of interfacial hole accumulation on photoelectrochemical water oxidation in BiVO4 and Mo-doped BiVO4

Hole transfer at the semiconductor-electrolyte interface is a key elementary process in (photo)electrochemical (PEC) water oxidation. However, up to now, a detailed understanding of the hole transfer and the influence of surface hole density on PEC water oxidation kinetics is lacking. In this work,...

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Bibliographic Details
Main Authors: Xiaofeng Wu, Freddy E. Oropeza, Shixin Chang, Marcus Einert, Qingyang Wu, Clément Maheu, Julia Gallenberger, Chuanmu Tian, Kangle Lv, Jan P. Hofmann
Format: Article
Language:English
Published: KeAi Communications Co. Ltd. 2024-12-01
Series:Advanced Powder Materials
Subjects:
Water splitting
Bismuth vanadate
Rate law analysis
Surface holes
Photoelectrochemistry
Online Access:http://www.sciencedirect.com/science/article/pii/S2772834X24000654
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