Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub>
Ternary In<sub>1−x</sub>Ga<sub>x</sub>P quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. However, most reported methods for Ga incorporation into the InP...
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2024-12-01
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| author | Calem Duah Ji-Seoung Jeong Ji Yeon Ryu Bo Keun Park Young Kuk Lee Seon Joo Lee |
| author_facet | Calem Duah Ji-Seoung Jeong Ji Yeon Ryu Bo Keun Park Young Kuk Lee Seon Joo Lee |
| author_sort | Calem Duah |
| collection | DOAJ |
| description | Ternary In<sub>1−x</sub>Ga<sub>x</sub>P quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. However, most reported methods for Ga incorporation into the InP structure have predominantly relied on cation exchange in pre-grown InP QDs at elevated temperatures above 280 °C. This is largely due to the fact that, when heating In and P precursors in the presence of Ga, an InP/GaP core–shell structure readily forms. Herein, we introduce a novel synthesis approach using the indium precursor [In(btsa)<sub>2</sub>Cl]<sub>2</sub> and GaI<sub>3</sub> to fabricate In<sub>1−x</sub>Ga<sub>x</sub>P QDs in a single step at relatively low temperatures (200 °C). By adjusting the GaI<sub>3</sub> content, we achieved controlled emission tuning from red to blue. Structural and compositional analysis through X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirmed successful Ga<sup>3+</sup> incorporation into the QD core, with a corresponding blue shift in the emission as GaI<sub>3</sub> content increased. The synthesized QDs demonstrated a photoluminescence quantum yield (PLQY) of ~50% and a full width at half maximum (FWHM) of 45~62 nm, highlighting the potential of this synthesis method for advanced optoelectronic applications. |
| format | Article |
| id | doaj-art-bea34b2b4c3744698b87fa9a156b5419 |
| institution | Kabale University |
| issn | 1420-3049 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj-art-bea34b2b4c3744698b87fa9a156b54192025-01-10T13:18:40ZengMDPI AGMolecules1420-30492024-12-013013510.3390/molecules30010035Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub>Calem Duah0Ji-Seoung Jeong1Ji Yeon Ryu2Bo Keun Park3Young Kuk Lee4Seon Joo Lee5Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of KoreaDivision of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of KoreaDivision of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of KoreaDivision of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of KoreaDivision of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of KoreaDivision of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of KoreaTernary In<sub>1−x</sub>Ga<sub>x</sub>P quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. However, most reported methods for Ga incorporation into the InP structure have predominantly relied on cation exchange in pre-grown InP QDs at elevated temperatures above 280 °C. This is largely due to the fact that, when heating In and P precursors in the presence of Ga, an InP/GaP core–shell structure readily forms. Herein, we introduce a novel synthesis approach using the indium precursor [In(btsa)<sub>2</sub>Cl]<sub>2</sub> and GaI<sub>3</sub> to fabricate In<sub>1−x</sub>Ga<sub>x</sub>P QDs in a single step at relatively low temperatures (200 °C). By adjusting the GaI<sub>3</sub> content, we achieved controlled emission tuning from red to blue. Structural and compositional analysis through X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirmed successful Ga<sup>3+</sup> incorporation into the QD core, with a corresponding blue shift in the emission as GaI<sub>3</sub> content increased. The synthesized QDs demonstrated a photoluminescence quantum yield (PLQY) of ~50% and a full width at half maximum (FWHM) of 45~62 nm, highlighting the potential of this synthesis method for advanced optoelectronic applications.https://www.mdpi.com/1420-3049/30/1/35quantum dotsIn<sub>1−x</sub>Ga<sub>x</sub>PIn precursorred-to-blue emissionphotoluminescence quantum yield |
| spellingShingle | Calem Duah Ji-Seoung Jeong Ji Yeon Ryu Bo Keun Park Young Kuk Lee Seon Joo Lee Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub> Molecules quantum dots In<sub>1−x</sub>Ga<sub>x</sub>P In precursor red-to-blue emission photoluminescence quantum yield |
| title | Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub> |
| title_full | Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub> |
| title_fullStr | Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub> |
| title_full_unstemmed | Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub> |
| title_short | Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub> |
| title_sort | tailoring red to blue emission in in sub 1 x sub ga sub x sub p znse zns quantum dots using a novel in btsa sub 2 sub cl sub 2 sub precursor and gai sub 3 sub |
| topic | quantum dots In<sub>1−x</sub>Ga<sub>x</sub>P In precursor red-to-blue emission photoluminescence quantum yield |
| url | https://www.mdpi.com/1420-3049/30/1/35 |
| work_keys_str_mv | AT calemduah tailoringredtoblueemissionininsub1xsubgasubxsubpznseznsquantumdotsusinganovelinbtsasub2subclsub2subprecursorandgaisub3sub AT jiseoungjeong tailoringredtoblueemissionininsub1xsubgasubxsubpznseznsquantumdotsusinganovelinbtsasub2subclsub2subprecursorandgaisub3sub AT jiyeonryu tailoringredtoblueemissionininsub1xsubgasubxsubpznseznsquantumdotsusinganovelinbtsasub2subclsub2subprecursorandgaisub3sub AT bokeunpark tailoringredtoblueemissionininsub1xsubgasubxsubpznseznsquantumdotsusinganovelinbtsasub2subclsub2subprecursorandgaisub3sub AT youngkuklee tailoringredtoblueemissionininsub1xsubgasubxsubpznseznsquantumdotsusinganovelinbtsasub2subclsub2subprecursorandgaisub3sub AT seonjoolee tailoringredtoblueemissionininsub1xsubgasubxsubpznseznsquantumdotsusinganovelinbtsasub2subclsub2subprecursorandgaisub3sub |