Performance Enhancement of MoSe<sub>2</sub> and WSe<sub>2</sub> Based Junction Field Effect Transistors with Gate-All-Around Structure
Recently, two-dimensional materials have gained significant attention due to their outstanding properties such as high charge mobility, mechanical strength, and electrical characteristics. These materials are considered one of the most promising solutions to overcome the limitations of semiconductor...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/14/11/984 |
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