Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma
We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the p...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-02-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3852 |
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| _version_ | 1849340556904235008 |
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| author | N. S. Koval’chuk S. A. Demidovich L. A. Vlasukova I. N. Parkhomenko |
| author_facet | N. S. Koval’chuk S. A. Demidovich L. A. Vlasukova I. N. Parkhomenko |
| author_sort | N. S. Koval’chuk |
| collection | DOAJ |
| description | We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the pressure in the reaction chamber, it is possible to obtain SiNx films with tensile or compressive residual stresses. The stress drift was estimated within four weeks after film deposition. It has been shown that for nitride films with residual stresses initially close to zero, an increase in the level of compressive stresses to (–300) MPa is observed during storage. |
| format | Article |
| id | doaj-art-be35dc7638d34d14a543b4e281c3678f |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2024-02-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-be35dc7638d34d14a543b4e281c3678f2025-08-20T03:43:52ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482024-02-0122151210.35596/1729-7648-2024-22-1-5-121960Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled PlasmaN. S. Koval’chuk0S. A. Demidovich1L. A. Vlasukova2I. N. Parkhomenko3JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”JSC “INTEGRAL” – Manager Holding Company “INTEGRAL”Belarusian State UniversityBelarusian State UniversityWe have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the pressure in the reaction chamber, it is possible to obtain SiNx films with tensile or compressive residual stresses. The stress drift was estimated within four weeks after film deposition. It has been shown that for nitride films with residual stresses initially close to zero, an increase in the level of compressive stresses to (–300) MPa is observed during storage.https://doklady.bsuir.by/jour/article/view/3852silicon nitridevapor depositionhigh-density plasmamechanical stressrefractive index |
| spellingShingle | N. S. Koval’chuk S. A. Demidovich L. A. Vlasukova I. N. Parkhomenko Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon nitride vapor deposition high-density plasma mechanical stress refractive index |
| title | Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma |
| title_full | Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma |
| title_fullStr | Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma |
| title_full_unstemmed | Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma |
| title_short | Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma |
| title_sort | deposition of sin sub x sub films with controlled residual stress from sih sub 4 sub nh sub 3 sub he gaseous mixture in inductively coupled plasma |
| topic | silicon nitride vapor deposition high-density plasma mechanical stress refractive index |
| url | https://doklady.bsuir.by/jour/article/view/3852 |
| work_keys_str_mv | AT nskovalchuk depositionofsinsubxsubfilmswithcontrolledresidualstressfromsihsub4subnhsub3subhegaseousmixtureininductivelycoupledplasma AT sademidovich depositionofsinsubxsubfilmswithcontrolledresidualstressfromsihsub4subnhsub3subhegaseousmixtureininductivelycoupledplasma AT lavlasukova depositionofsinsubxsubfilmswithcontrolledresidualstressfromsihsub4subnhsub3subhegaseousmixtureininductivelycoupledplasma AT inparkhomenko depositionofsinsubxsubfilmswithcontrolledresidualstressfromsihsub4subnhsub3subhegaseousmixtureininductivelycoupledplasma |