LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure developed on a SiC substrate and the clear double hu...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217924001266 |
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