Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid
Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanc...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10758789/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841550871068934144 |
|---|---|
| author | Shinya Imai Ryo Ono Iriya Muneta Kuniyuki Kakushima Tetsuya Tatsumi Shigetaka Tomiya Kazuo Tsutsui Hitoshi Wakabayashi |
| author_facet | Shinya Imai Ryo Ono Iriya Muneta Kuniyuki Kakushima Tetsuya Tatsumi Shigetaka Tomiya Kazuo Tsutsui Hitoshi Wakabayashi |
| author_sort | Shinya Imai |
| collection | DOAJ |
| description | Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices. |
| format | Article |
| id | doaj-art-bc84f01173dc40d4a533ebbff5f2b6a7 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-bc84f01173dc40d4a533ebbff5f2b6a72025-01-10T00:00:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-0113152310.1109/JEDS.2024.350292210758789Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum GridShinya Imai0https://orcid.org/0000-0002-1993-9910Ryo Ono1https://orcid.org/0009-0000-0960-2583Iriya Muneta2https://orcid.org/0000-0001-7620-4948Kuniyuki Kakushima3Tetsuya Tatsumi4Shigetaka Tomiya5https://orcid.org/0000-0003-0377-9331Kazuo Tsutsui6https://orcid.org/0000-0002-5472-5539Hitoshi Wakabayashi7https://orcid.org/0000-0001-5509-521XDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, JapanLowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.https://ieeexplore.ieee.org/document/10758789/Transition metal di-chalcogenide (TMDC)molybdenum di-sulfide (MoS₂)ultra-high vacuum (UHV) radio frequency (RF) magnetron sputteringlow-rate sputteringgrain size |
| spellingShingle | Shinya Imai Ryo Ono Iriya Muneta Kuniyuki Kakushima Tetsuya Tatsumi Shigetaka Tomiya Kazuo Tsutsui Hitoshi Wakabayashi Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid IEEE Journal of the Electron Devices Society Transition metal di-chalcogenide (TMDC) molybdenum di-sulfide (MoS₂) ultra-high vacuum (UHV) radio frequency (RF) magnetron sputtering low-rate sputtering grain size |
| title | Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid |
| title_full | Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid |
| title_fullStr | Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid |
| title_full_unstemmed | Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid |
| title_short | Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid |
| title_sort | improvement of mos sub 2 sub film quality by low flux of sputtered particles using a molybdenum grid |
| topic | Transition metal di-chalcogenide (TMDC) molybdenum di-sulfide (MoS₂) ultra-high vacuum (UHV) radio frequency (RF) magnetron sputtering low-rate sputtering grain size |
| url | https://ieeexplore.ieee.org/document/10758789/ |
| work_keys_str_mv | AT shinyaimai improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT ryoono improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT iriyamuneta improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT kuniyukikakushima improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT tetsuyatatsumi improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT shigetakatomiya improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT kazuotsutsui improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid AT hitoshiwakabayashi improvementofmossub2subfilmqualitybylowfluxofsputteredparticlesusingamolybdenumgrid |