New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing
For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to th...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
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| Series: | Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-3900/97/1/98 |
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| Summary: | For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to the lack of long-term stability of Si NWs in aqueous solutions. More particularly, we fabricated a micro/nanowire SiC-based ion-sensitive junction field-effect transistor (SiC-ISJFET) and studied its sensitivity to pH variations. The obtained sensitivity reaches 500 mV/pH, making it the first SiC pH sensor with performance equaling that of the latest NWFET Si-based pH sensors. |
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| ISSN: | 2504-3900 |